Vertical organic transistors withstanding high voltage bias

Po Yi Chang, Shao Fu Peng, Yu Chiang Chao, Hung Cheng Lin, Hsiao Wen Zan, Hsin Fei Meng

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Vertical organic transistors withstanding high voltage bias were realized with an insulating silicon monoxide layer obliquely deposited on both the surface of the base electrode and sidewalls of the vertically oriented cylindrical nanopores. No noticeable insulating layer can be observed on the emitter electrode at the bottom of the cylindrical nanopores. The leakage current between the electrodes was suppressed and an operating voltage as high as 15 V was obtained. An on/off current ratio of 103-104 and an output current density of 5-10 mA/cm2 were achieved.

Original languageEnglish
Article number153301
JournalApplied Physics Letters
Issue number15
Publication statusPublished - 2015 Apr 13


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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