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Varistors made of indium tin oxide/Si multilayers on p-type GaN substrates
S. Y. Yang
, P. P. Su
, Y. C. Chiu
, Chin Yih Hong
*
, H. C. Yang
, W. H. Liu
, B. J. Lee
*
Corresponding author for this work
Institute and Undergraduate Program of Electro-Optical Engineering
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INIS
layers
100%
substrates
100%
gallium nitrides
100%
indium
100%
tin oxides
100%
varistors
100%
semiconductor materials
60%
films
40%
design
20%
devices
20%
operation
20%
symmetry
20%
voltage
20%
nonlinear problems
20%
thin films
20%
surges
20%
stabilization
20%
current-voltage curves
20%
Material Science
Indium Tin Oxide
100%
Varistors
100%
Film
50%
Conductor
50%
Electronic Circuit
25%
Current Voltage Characteristics
25%
Current-Voltage Characteristic
25%
Design Principle
25%
Thin Films
25%