Van der Waal Epitaxy of Flexible and Transparent VO2 Film on Muscovite

Chien I. Li, Jheng Cyuan Lin, Heng Jui Liu, Ming Wen Chu, Hsiao Wen Chen, Chun Hao Ma, Chih Ya Tsai, Hsin Wei Huang, Hong Ji Lin, Hsiang Lin Liu, Po Wen Chiu, Ying Hao Chu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

105 Citations (Scopus)


Vanadium dioxide (VO2) is a compelling candidate for next-generation electronics beyond conventional silicon-based devices due to the exhibition of a sharp metal-insulator transition. In this study, in order to realize functional VO2 film for flexible electronics, the growth of VO2 film directly on a transparent and flexible muscovite via van der Waals epitaxy is established. The heteroepitaxy and structural transition of VO2 films on muscovite are examined by a combination of high-resolution X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. The unique metal-insulator transition of VO2 is further revealed with a change in electrical resistance over 103 and a more than 50% variation of optical transmittance. Furthermore, due to the nature of muscovite, the VO2/muscovite heterostructure possesses superior flexibility and optical transparence. The approach developed in this study paves an intriguing way to fabricate functional VO2 film for the applications in flexible electronics.

Original languageEnglish
Pages (from-to)3914-3919
Number of pages6
JournalChemistry of Materials
Issue number11
Publication statusPublished - 2016 Jun 14

ASJC Scopus subject areas

  • General Chemistry
  • General Chemical Engineering
  • Materials Chemistry


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