V-III ratio effect on cubic GaN grown by RF plasma assisted gas source MBE

Li Wei Sung; Hao Hsiung Lin; Chih Ta Chia

V-III ratio effect on cubic GaN grown by RF plasma assisted gas source MBE

Li Wei Sung^*, Hao Hsiung Lin, Chih Ta Chia

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report the investigation on the growth conditions and optical properties of cubic GaN films grown on (001) GaAs substrate by using RF plasma assisted gas source MBE. The cubic GaN films were deposited at different Ga to N flux ratios that were determined by deposition rates directly. Three growth regimes, namely, Ga droplet, intermediate Ga, stable, and N stable regime, are defined in the growth diagram. Optical quality of these films was determined by using photoluminescence (PL). Micro-Raman scattering were performed to analyze the crystallinity of the films. Optimal growth condition of cubic GaN is on the boundary of intermediate GA stable regime and Ga droplet regime at a growth temperature of Ts = 720°C.

Original language	English
Pages (from-to)	117-122
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	693
Publication status	Published - 2002
Externally published	Yes
Event	GaN and Related Alloys-2001 - Boston, MA, United States Duration: 2001 Nov 26 → 2001 Nov 30

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "V-III ratio effect on cubic GaN grown by RF plasma assisted gas source MBE",

abstract = "We report the investigation on the growth conditions and optical properties of cubic GaN films grown on (001) GaAs substrate by using RF plasma assisted gas source MBE. The cubic GaN films were deposited at different Ga to N flux ratios that were determined by deposition rates directly. Three growth regimes, namely, Ga droplet, intermediate Ga, stable, and N stable regime, are defined in the growth diagram. Optical quality of these films was determined by using photoluminescence (PL). Micro-Raman scattering were performed to analyze the crystallinity of the films. Optimal growth condition of cubic GaN is on the boundary of intermediate GA stable regime and Ga droplet regime at a growth temperature of Ts = 720°C.",

author = "Sung, {Li Wei} and Lin, {Hao Hsiung} and Chia, {Chih Ta}",

year = "2002",

language = "English",

volume = "693",

pages = "117--122",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "GaN and Related Alloys-2001 ; Conference date: 26-11-2001 Through 30-11-2001",

}

TY - JOUR

T1 - V-III ratio effect on cubic GaN grown by RF plasma assisted gas source MBE

AU - Sung, Li Wei

AU - Lin, Hao Hsiung

AU - Chia, Chih Ta

PY - 2002

Y1 - 2002

N2 - We report the investigation on the growth conditions and optical properties of cubic GaN films grown on (001) GaAs substrate by using RF plasma assisted gas source MBE. The cubic GaN films were deposited at different Ga to N flux ratios that were determined by deposition rates directly. Three growth regimes, namely, Ga droplet, intermediate Ga, stable, and N stable regime, are defined in the growth diagram. Optical quality of these films was determined by using photoluminescence (PL). Micro-Raman scattering were performed to analyze the crystallinity of the films. Optimal growth condition of cubic GaN is on the boundary of intermediate GA stable regime and Ga droplet regime at a growth temperature of Ts = 720°C.

AB - We report the investigation on the growth conditions and optical properties of cubic GaN films grown on (001) GaAs substrate by using RF plasma assisted gas source MBE. The cubic GaN films were deposited at different Ga to N flux ratios that were determined by deposition rates directly. Three growth regimes, namely, Ga droplet, intermediate Ga, stable, and N stable regime, are defined in the growth diagram. Optical quality of these films was determined by using photoluminescence (PL). Micro-Raman scattering were performed to analyze the crystallinity of the films. Optimal growth condition of cubic GaN is on the boundary of intermediate GA stable regime and Ga droplet regime at a growth temperature of Ts = 720°C.

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M3 - Conference article

AN - SCOPUS:0036374107

SN - 0272-9172

VL - 693

SP - 117

EP - 122

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - GaN and Related Alloys-2001

Y2 - 26 November 2001 through 30 November 2001

ER -

V-III ratio effect on cubic GaN grown by RF plasma assisted gas source MBE

Abstract

ASJC Scopus subject areas

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