V-III ratio effect on cubic GaN grown by RF plasma assisted gas source MBE

Li Wei Sung*, Hao Hsiung Lin, Chih Ta Chia

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


We report the investigation on the growth conditions and optical properties of cubic GaN films grown on (001) GaAs substrate by using RF plasma assisted gas source MBE. The cubic GaN films were deposited at different Ga to N flux ratios that were determined by deposition rates directly. Three growth regimes, namely, Ga droplet, intermediate Ga, stable, and N stable regime, are defined in the growth diagram. Optical quality of these films was determined by using photoluminescence (PL). Micro-Raman scattering were performed to analyze the crystallinity of the films. Optimal growth condition of cubic GaN is on the boundary of intermediate GA stable regime and Ga droplet regime at a growth temperature of Ts = 720°C.

Original languageEnglish
Pages (from-to)117-122
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2002
Externally publishedYes
EventGaN and Related Alloys-2001 - Boston, MA, United States
Duration: 2001 Nov 262001 Nov 30

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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