V-band fully-integrated CMOS LNA and DAT PA for 60 GHz WPAN applications

Wei Heng Lin, Yung Nien Jen, Jeng Han Tsai, Hsin Chia Lu, Tian Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

A V-band low-noise amplifier (LNA) and a distributed active transformer (DAT) power amplifier (PA) using 130nm standard MS/RF CMOS technology are presented in this paper. The three-stage LNA features 20±0.5 dB flat gain from 56-64 GHz and the minimum noise figure is 6.9 dB at 60 GHz at 2.4-V supply. The three-stage PA with four-time power combination in DAT structure achieves a peak gain of 21.1 dB at 58 GHz, OP1dB of 8.34 dBm, Psat of 13 dBm, and PAE of 6.4% under 2.4-V supply voltage. It also achieves 17.5 dB gain, OP1dB of 6.74 dBm, Psat of 11.6 dBm, and 4.4% PAE at 60 GHz. Thin-film microstrip line is used for matching circuits and compact the chip size, the LNA and PA die area including all pads are 0.67 × 0.57 and 0.85 × 0.80 mm 2, respectively. The LNA and PA MMICs demonstrate the superior gain and power performance in 130-nm CMOS process.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2010, EuMW2010
Subtitle of host publicationConnecting the World, Conference Proceedings - European Microwave Conference, EuMC 2010
Pages284-287
Number of pages4
Publication statusPublished - 2010 Dec 17
Event13th European Microwave Week 2010, EuMW2010: Connecting the World - 40th European Microwave Conference, EuMC 2010 - Paris, France
Duration: 2010 Sep 282010 Sep 30

Publication series

NameEuropean Microwave Week 2010, EuMW2010: Connecting the World, Conference Proceedings - European Microwave Conference, EuMC 2010

Other

Other13th European Microwave Week 2010, EuMW2010: Connecting the World - 40th European Microwave Conference, EuMC 2010
CountryFrance
CityParis
Period10/9/2810/9/30

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

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