UV-enhanced room-temperature ultrasensitive NO gas sensor with vertical channel nano-porous organic diodes

Govindasamy Madhaiyan, Ting Wei Tung, Hsiao Wen Zan, Hsin Fei Meng, Chia Jung Lu, Arshiya Ansari, Wei Tsung Chuang, Hong Cheu Lin

Research output: Contribution to journalArticle

Abstract

In this work, we successfully proposed an organic semiconductor gas sensor on vertical channel design to exhibit an ultra-sensitive response to nitric oxide gas (10 ppb) at room temperature. The effect of ultra-violet (UV) irradiation (λ =365 nm) on sensing performance of solution processed vertical organic diode (VOD) has been investigated. After implementing a simple and low-cost UV treatment, the sensing response of PBDTTT-C-T based NO sensor is significantly enhanced from 93 % to 233 % at 1 ppm. In addition, we also introduced a new strategy to tune the selectivity of organic gas sensors by using photochromic molecule and organic semiconductor blends. With the 1 Wt% spiropyran dopant, the sensor response to ammonia can be considerably suppressed, hence the response ratio between NO and ammonia can be improved from 2.9 to 16.0, indicating an improved selectivity. The proposed ultrasensitive and selective NO gas sensor have great potential for exhaled breath detection (asthma patients) and environmental monitoring.

Original languageEnglish
Article number128392
JournalSensors and Actuators, B: Chemical
Volume320
DOIs
Publication statusPublished - 2020 Oct 1

Keywords

  • Nitric oxide gas sensor
  • Organic semiconductor
  • Photochromic molecules
  • UV treatment

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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