Using hole screening effect on hole-phonon interaction to estimate hole density in Mg-doped InN

Yi En Su; Yu Chieh Wen; Yu Liang Hong; Hong Mao Lee; Shangjr Gwo; Yuan Ting Lin; Li Wei Tu; Hsiang Lin Liu; Chi Kuang Sun

doi:10.1063/1.3591974

Using hole screening effect on hole-phonon interaction to estimate hole density in Mg-doped InN

Yi En Su^*, Yu Chieh Wen, Yu Liang Hong, Hong Mao Lee, Shangjr Gwo, Yuan Ting Lin, Li Wei Tu, Hsiang Lin Liu, Chi Kuang Sun

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The screening effect of heavy-hole LO-phonon interaction is observed and studied through the pump-probe transmission measurement in Mg-doped InN. Combining the measured transient hole dynamics with the absorption spectra, the optical based observation is able to prevent the influence of the surface n-type layer and the depression layer in Mg-doped InN. With the observed heavy-hole heating time at different photoexcited carrier densities and the measured absorption edge, we show that it is now possible to estimate the background hole density and band gap energy in Mg-doped InN.

Original language	English
Article number	252106
Journal	Applied Physics Letters
Volume	98
Issue number	25
DOIs	https://doi.org/10.1063/1.3591974
Publication status	Published - 2011 Jun 20

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3591974

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@article{e6ffcb24ca8548a3ad2eae3ba8daea3b,

title = "Using hole screening effect on hole-phonon interaction to estimate hole density in Mg-doped InN",

abstract = "The screening effect of heavy-hole LO-phonon interaction is observed and studied through the pump-probe transmission measurement in Mg-doped InN. Combining the measured transient hole dynamics with the absorption spectra, the optical based observation is able to prevent the influence of the surface n-type layer and the depression layer in Mg-doped InN. With the observed heavy-hole heating time at different photoexcited carrier densities and the measured absorption edge, we show that it is now possible to estimate the background hole density and band gap energy in Mg-doped InN.",

author = "Su, {Yi En} and Wen, {Yu Chieh} and Hong, {Yu Liang} and Lee, {Hong Mao} and Shangjr Gwo and Lin, {Yuan Ting} and Tu, {Li Wei} and Liu, {Hsiang Lin} and Sun, {Chi Kuang}",

note = "Funding Information: This work was sponsored by National Science Council under Contract No. NSC99-2120-M-002-013.",

year = "2011",

month = jun,

day = "20",

doi = "10.1063/1.3591974",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Using hole screening effect on hole-phonon interaction to estimate hole density in Mg-doped InN

AU - Su, Yi En

AU - Wen, Yu Chieh

AU - Hong, Yu Liang

AU - Lee, Hong Mao

AU - Gwo, Shangjr

AU - Lin, Yuan Ting

AU - Tu, Li Wei

AU - Liu, Hsiang Lin

AU - Sun, Chi Kuang

N1 - Funding Information: This work was sponsored by National Science Council under Contract No. NSC99-2120-M-002-013.

PY - 2011/6/20

Y1 - 2011/6/20

N2 - The screening effect of heavy-hole LO-phonon interaction is observed and studied through the pump-probe transmission measurement in Mg-doped InN. Combining the measured transient hole dynamics with the absorption spectra, the optical based observation is able to prevent the influence of the surface n-type layer and the depression layer in Mg-doped InN. With the observed heavy-hole heating time at different photoexcited carrier densities and the measured absorption edge, we show that it is now possible to estimate the background hole density and band gap energy in Mg-doped InN.

AB - The screening effect of heavy-hole LO-phonon interaction is observed and studied through the pump-probe transmission measurement in Mg-doped InN. Combining the measured transient hole dynamics with the absorption spectra, the optical based observation is able to prevent the influence of the surface n-type layer and the depression layer in Mg-doped InN. With the observed heavy-hole heating time at different photoexcited carrier densities and the measured absorption edge, we show that it is now possible to estimate the background hole density and band gap energy in Mg-doped InN.

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DO - 10.1063/1.3591974

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 252106

ER -

Using hole screening effect on hole-phonon interaction to estimate hole density in Mg-doped InN

Abstract

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