Using hole screening effect on hole-phonon interaction to estimate hole density in Mg-doped InN

Yi En Su, Yu Chieh Wen, Yu Liang Hong, Hong Mao Lee, Shangjr Gwo, Yuan Ting Lin, Li Wei Tu, Hsiang Lin Liu, Chi Kuang Sun

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Abstract

The screening effect of heavy-hole LO-phonon interaction is observed and studied through the pump-probe transmission measurement in Mg-doped InN. Combining the measured transient hole dynamics with the absorption spectra, the optical based observation is able to prevent the influence of the surface n-type layer and the depression layer in Mg-doped InN. With the observed heavy-hole heating time at different photoexcited carrier densities and the measured absorption edge, we show that it is now possible to estimate the background hole density and band gap energy in Mg-doped InN.

Original languageEnglish
Article number252106
JournalApplied Physics Letters
Volume98
Issue number25
DOIs
Publication statusPublished - 2011 Jun 20

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Su, Y. E., Wen, Y. C., Hong, Y. L., Lee, H. M., Gwo, S., Lin, Y. T., Tu, L. W., Liu, H. L., & Sun, C. K. (2011). Using hole screening effect on hole-phonon interaction to estimate hole density in Mg-doped InN. Applied Physics Letters, 98(25), [252106]. https://doi.org/10.1063/1.3591974