Using hole screening effect on hole-phonon interaction to estimate hole density in Mg-doped InN

Yi En Su, Yu Chieh Wen, Yu Liang Hong, Hong Mao Lee, Shangjr Gwo, Yuan Ting Lin, Li Wei Tu, Hsiang Lin Liu, Chi Kuang Sun

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The screening effect of heavy-hole LO-phonon interaction is observed and studied through the pump-probe transmission measurement in Mg-doped InN. Combining the measured transient hole dynamics with the absorption spectra, the optical based observation is able to prevent the influence of the surface n-type layer and the depression layer in Mg-doped InN. With the observed heavy-hole heating time at different photoexcited carrier densities and the measured absorption edge, we show that it is now possible to estimate the background hole density and band gap energy in Mg-doped InN.

Original languageEnglish
Article number252106
JournalApplied Physics Letters
Volume98
Issue number25
DOIs
Publication statusPublished - 2011 Jun 20

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screening
estimates
interactions
pumps
absorption spectra
heating
probes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Su, Y. E., Wen, Y. C., Hong, Y. L., Lee, H. M., Gwo, S., Lin, Y. T., ... Sun, C. K. (2011). Using hole screening effect on hole-phonon interaction to estimate hole density in Mg-doped InN. Applied Physics Letters, 98(25), [252106]. https://doi.org/10.1063/1.3591974

Using hole screening effect on hole-phonon interaction to estimate hole density in Mg-doped InN. / Su, Yi En; Wen, Yu Chieh; Hong, Yu Liang; Lee, Hong Mao; Gwo, Shangjr; Lin, Yuan Ting; Tu, Li Wei; Liu, Hsiang Lin; Sun, Chi Kuang.

In: Applied Physics Letters, Vol. 98, No. 25, 252106, 20.06.2011.

Research output: Contribution to journalArticle

Su, YE, Wen, YC, Hong, YL, Lee, HM, Gwo, S, Lin, YT, Tu, LW, Liu, HL & Sun, CK 2011, 'Using hole screening effect on hole-phonon interaction to estimate hole density in Mg-doped InN', Applied Physics Letters, vol. 98, no. 25, 252106. https://doi.org/10.1063/1.3591974
Su, Yi En ; Wen, Yu Chieh ; Hong, Yu Liang ; Lee, Hong Mao ; Gwo, Shangjr ; Lin, Yuan Ting ; Tu, Li Wei ; Liu, Hsiang Lin ; Sun, Chi Kuang. / Using hole screening effect on hole-phonon interaction to estimate hole density in Mg-doped InN. In: Applied Physics Letters. 2011 ; Vol. 98, No. 25.
@article{8175e483fe2444099ce9c7d6e5eee8f8,
title = "Using hole screening effect on hole-phonon interaction to estimate hole density in Mg-doped InN",
abstract = "The screening effect of heavy-hole LO-phonon interaction is observed and studied through the pump-probe transmission measurement in Mg-doped InN. Combining the measured transient hole dynamics with the absorption spectra, the optical based observation is able to prevent the influence of the surface n-type layer and the depression layer in Mg-doped InN. With the observed heavy-hole heating time at different photoexcited carrier densities and the measured absorption edge, we show that it is now possible to estimate the background hole density and band gap energy in Mg-doped InN.",
author = "Su, {Yi En} and Wen, {Yu Chieh} and Hong, {Yu Liang} and Lee, {Hong Mao} and Shangjr Gwo and Lin, {Yuan Ting} and Tu, {Li Wei} and Liu, {Hsiang Lin} and Sun, {Chi Kuang}",
year = "2011",
month = "6",
day = "20",
doi = "10.1063/1.3591974",
language = "English",
volume = "98",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "25",

}

TY - JOUR

T1 - Using hole screening effect on hole-phonon interaction to estimate hole density in Mg-doped InN

AU - Su, Yi En

AU - Wen, Yu Chieh

AU - Hong, Yu Liang

AU - Lee, Hong Mao

AU - Gwo, Shangjr

AU - Lin, Yuan Ting

AU - Tu, Li Wei

AU - Liu, Hsiang Lin

AU - Sun, Chi Kuang

PY - 2011/6/20

Y1 - 2011/6/20

N2 - The screening effect of heavy-hole LO-phonon interaction is observed and studied through the pump-probe transmission measurement in Mg-doped InN. Combining the measured transient hole dynamics with the absorption spectra, the optical based observation is able to prevent the influence of the surface n-type layer and the depression layer in Mg-doped InN. With the observed heavy-hole heating time at different photoexcited carrier densities and the measured absorption edge, we show that it is now possible to estimate the background hole density and band gap energy in Mg-doped InN.

AB - The screening effect of heavy-hole LO-phonon interaction is observed and studied through the pump-probe transmission measurement in Mg-doped InN. Combining the measured transient hole dynamics with the absorption spectra, the optical based observation is able to prevent the influence of the surface n-type layer and the depression layer in Mg-doped InN. With the observed heavy-hole heating time at different photoexcited carrier densities and the measured absorption edge, we show that it is now possible to estimate the background hole density and band gap energy in Mg-doped InN.

UR - http://www.scopus.com/inward/record.url?scp=79959607657&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79959607657&partnerID=8YFLogxK

U2 - 10.1063/1.3591974

DO - 10.1063/1.3591974

M3 - Article

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 252106

ER -