Using binary resistors to achieve multilevel resistive switching in multilayer NiO/Pt nanowire arrays

Yen Chun Huang, Po Yuan Chen, Kuo Feng Huang, Tzu Chi Chuang, Hsiu Hau Lin, Tsung Shune Chin, Ru Shi Liu, Yann Wen Lan, Chii Dong Chen, Chih Huang Lai*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


Reliable multilevel resistive switching in nanoscale cells is desirable for the wide adoption of resistive random access memory as the next-generation nonvolatile memory. We designed NiO-based cells in arrays of multilayered NiO/Pt nanowires to explore multilevel memory effects. Nonpolar resistive switching reproducibly occurs with significantly reduced switching voltages, narrow switching voltage distributions and a robust multilevel memory effect. A high resistance ratio (∼105) between the highand low-resistance states in nanoscale cells enables stable multilevels that can be induced easily by a series of pulsed voltage. The existence of intermediate resistance states in NiO/Pt nanowire arrays can be well explained by the binary-resistor model combined with energy perturbations induced by the pulse voltage. We also verified that the conduction mechanism in multilayered NiO/Pt nanowires is dominated by the hopping of holes. Our bottom-up approach and proposed mechanism explain the controllable multilevel memory effect and facilitate sound device design to encourage their universal adoption.

Original languageEnglish
Article number81
JournalNPG Asia Materials
Issue number2
Publication statusPublished - 2014 Feb
Externally publishedYes


  • Binary-resistor
  • Multilayered nanowires
  • Multilevel memory effect
  • NiO
  • Nonpolar resistive switching

ASJC Scopus subject areas

  • Modelling and Simulation
  • General Materials Science
  • Condensed Matter Physics


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