Using binary resistors to achieve multilevel resistive switching in multilayer NiO/Pt nanowire arrays

Yen Chun Huang, Po Yuan Chen, Kuo Feng Huang, Tzu Chi Chuang, Hsiu Hau Lin, Tsung Shune Chin, Ru Shi Liu, Yann Wen Lan, Chii Dong Chen, Chih Huang Lai

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Reliable multilevel resistive switching in nanoscale cells is desirable for the wide adoption of resistive random access memory as the next-generation nonvolatile memory. We designed NiO-based cells in arrays of multilayered NiO/Pt nanowires to explore multilevel memory effects. Nonpolar resistive switching reproducibly occurs with significantly reduced switching voltages, narrow switching voltage distributions and a robust multilevel memory effect. A high resistance ratio (∼105) between the highand low-resistance states in nanoscale cells enables stable multilevels that can be induced easily by a series of pulsed voltage. The existence of intermediate resistance states in NiO/Pt nanowire arrays can be well explained by the binary-resistor model combined with energy perturbations induced by the pulse voltage. We also verified that the conduction mechanism in multilayered NiO/Pt nanowires is dominated by the hopping of holes. Our bottom-up approach and proposed mechanism explain the controllable multilevel memory effect and facilitate sound device design to encourage their universal adoption.

Original languageEnglish
Article number81
JournalNPG Asia Materials
Volume6
Issue number2
DOIs
Publication statusPublished - 2014 Feb 1

Keywords

  • Binary-resistor
  • Multilayered nanowires
  • Multilevel memory effect
  • NiO
  • Nonpolar resistive switching

ASJC Scopus subject areas

  • Modelling and Simulation
  • Materials Science(all)
  • Condensed Matter Physics

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    Huang, Y. C., Chen, P. Y., Huang, K. F., Chuang, T. C., Lin, H. H., Chin, T. S., Liu, R. S., Lan, Y. W., Chen, C. D., & Lai, C. H. (2014). Using binary resistors to achieve multilevel resistive switching in multilayer NiO/Pt nanowire arrays. NPG Asia Materials, 6(2), [81]. https://doi.org/10.1038/am.2013.81