Use of a high-work-function Ni electrode to improve the stress reliability of analog SrTiO3 metal-insulator-metal capacitors

K. C. Chiang; C. H. Cheng; K. Y. Jhou; H. C. Pan; C. N. Hsiao; C. P. Chou; S. P. McAlister; Albert Chin; H. L. Hwang

doi:10.1109/LED.2007.900876

Use of a high-work-function Ni electrode to improve the stress reliability of analog SrTiO₃ metal-insulator-metal capacitors

K. C. Chiang, C. H. Cheng, K. Y. Jhou, H. C. Pan, C. N. Hsiao, C. P. Chou, S. P. McAlister, Albert Chin, H. L. Hwang

Department of Mechatronic Engineering

Research output: Contribution to journal › Article

33 Citations (Scopus)

Abstract

We have studied the stress reliability of low-energy-bandgap high-κ SrTiO₃ metal-insulator-metal capacitors under constant voltage stress. By using a high-work-function Ni electrode (5.1 eV), we reduced the degrading effects of stress on the capacitance variation ( Δ C/C), the quadratic voltage coefficient of capacitance (VCC-α), and the long-term reliability, in contrast with using a TaN. The improved stress reliability for the Ni electrode capacitors is attributed to a reduction of carrier injection and trapping.

Original language	English
Pages (from-to)	694-696
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	8
DOIs	https://doi.org/10.1109/LED.2007.900876
Publication status	Published - 2007 Aug

Keywords

High work function
Metal-insulator-metal (MIM)
Ni
Reliability
SrTiO (STO)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Chiang, K. C., Cheng, C. H., Jhou, K. Y., Pan, H. C., Hsiao, C. N., Chou, C. P., McAlister, S. P., Chin, A., & Hwang, H. L. (2007). Use of a high-work-function Ni electrode to improve the stress reliability of analog SrTiO₃ metal-insulator-metal capacitors. IEEE Electron Device Letters, 28(8), 694-696. https://doi.org/10.1109/LED.2007.900876

Use of a high-work-function Ni electrode to improve the stress reliability of analog SrTiO₃ metal-insulator-metal capacitors. / Chiang, K. C.; Cheng, C. H.; Jhou, K. Y.; Pan, H. C.; Hsiao, C. N.; Chou, C. P.; McAlister, S. P.; Chin, Albert; Hwang, H. L.

In: IEEE Electron Device Letters, Vol. 28, No. 8, 08.2007, p. 694-696.

Research output: Contribution to journal › Article

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abstract = "We have studied the stress reliability of low-energy-bandgap high-κ SrTiO3 metal-insulator-metal capacitors under constant voltage stress. By using a high-work-function Ni electrode (5.1 eV), we reduced the degrading effects of stress on the capacitance variation ( Δ C/C), the quadratic voltage coefficient of capacitance (VCC-α), and the long-term reliability, in contrast with using a TaN. The improved stress reliability for the Ni electrode capacitors is attributed to a reduction of carrier injection and trapping.",

keywords = "High work function, Metal-insulator-metal (MIM), Ni, Reliability, SrTiO (STO)",

author = "Chiang, {K. C.} and Cheng, {C. H.} and Jhou, {K. Y.} and Pan, {H. C.} and Hsiao, {C. N.} and Chou, {C. P.} and McAlister, {S. P.} and Albert Chin and Hwang, {H. L.}",

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AU - Chiang, K. C.

AU - Cheng, C. H.

AU - Jhou, K. Y.

AU - Pan, H. C.

AU - Hsiao, C. N.

AU - Chou, C. P.

AU - McAlister, S. P.

AU - Chin, Albert

AU - Hwang, H. L.

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