@article{ed28239703124bdab673c56598b9440f,
title = "Use of a high-work-function Ni electrode to improve the stress reliability of analog SrTiO3 metal-insulator-metal capacitors",
abstract = "We have studied the stress reliability of low-energy-bandgap high-κ SrTiO3 metal-insulator-metal capacitors under constant voltage stress. By using a high-work-function Ni electrode (5.1 eV), we reduced the degrading effects of stress on the capacitance variation ( Δ C/C), the quadratic voltage coefficient of capacitance (VCC-α), and the long-term reliability, in contrast with using a TaN. The improved stress reliability for the Ni electrode capacitors is attributed to a reduction of carrier injection and trapping.",
keywords = "High work function, Metal-insulator-metal (MIM), Ni, Reliability, SrTiO (STO)",
author = "Chiang, {K. C.} and Cheng, {C. H.} and Jhou, {K. Y.} and Pan, {H. C.} and Hsiao, {C. N.} and Chou, {C. P.} and McAlister, {S. P.} and Albert Chin and Hwang, {H. L.}",
note = "Funding Information: Manuscript received April 23, 2007. This work has been supported in part by NSC 95-2221-E-009-275 and TDPA DOIT MOEA 94-EC-17-A-01-S1-047 of Taiwan, R.O.C. The review of this letter was arranged by A. Wang. K. C. Chiang, K. Y. Jhou, and A. Chin are with the Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C. (e-mail: albert_achin@hotmail.com). C. H. Cheng and C. P. Chou are with the Department of Mechanical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C. H. C. Pan and C. N. Hsiao are with the Instrument Technology Research Center, National Applied Research Laboratory, Hsinchu 300, Taiwan, R.O.C. S. P. McAlister is with the National Research Council of Canada, Ottawa, ON K1A 0R6, Canada. H. L. Hwang is with the Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan, R.O.C. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2007.900876",
year = "2007",
month = aug,
doi = "10.1109/LED.2007.900876",
language = "English",
volume = "28",
pages = "694--696",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",
}