Use of a high-work-function Ni electrode to improve the stress reliability of analog SrTiO3 metal-insulator-metal capacitors

K. C. Chiang; C. H. Cheng; K. Y. Jhou; H. C. Pan; C. N. Hsiao; C. P. Chou; S. P. McAlister; Albert Chin; H. L. Hwang

doi:10.1109/LED.2007.900876

Use of a high-work-function Ni electrode to improve the stress reliability of analog SrTiO₃ metal-insulator-metal capacitors

K. C. Chiang, C. H. Cheng, K. Y. Jhou, H. C. Pan, C. N. Hsiao, C. P. Chou, S. P. McAlister, Albert Chin, H. L. Hwang

Research output: Contribution to journal › Article

33 Citations (Scopus)

Abstract

We have studied the stress reliability of low-energy-bandgap high-κ SrTiO₃ metal-insulator-metal capacitors under constant voltage stress. By using a high-work-function Ni electrode (5.1 eV), we reduced the degrading effects of stress on the capacitance variation ( Δ C/C), the quadratic voltage coefficient of capacitance (VCC-α), and the long-term reliability, in contrast with using a TaN. The improved stress reliability for the Ni electrode capacitors is attributed to a reduction of carrier injection and trapping.

Original language	English
Pages (from-to)	694-696
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	8
DOIs	https://doi.org/10.1109/LED.2007.900876
Publication status	Published - 2007 Aug 1
Externally published	Yes

Keywords

High work function
Metal-insulator-metal (MIM)
Ni
Reliability
SrTiO (STO)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2007.900876

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Chiang, K. C., Cheng, C. H., Jhou, K. Y., Pan, H. C., Hsiao, C. N., Chou, C. P., McAlister, S. P., Chin, A., & Hwang, H. L. (2007). Use of a high-work-function Ni electrode to improve the stress reliability of analog SrTiO₃ metal-insulator-metal capacitors. IEEE Electron Device Letters, 28(8), 694-696. https://doi.org/10.1109/LED.2007.900876

Use of a high-work-function Ni electrode to improve the stress reliability of analog SrTiO₃ metal-insulator-metal capacitors. / Chiang, K. C.; Cheng, C. H.; Jhou, K. Y.; Pan, H. C.; Hsiao, C. N.; Chou, C. P.; McAlister, S. P.; Chin, Albert; Hwang, H. L.

In: IEEE Electron Device Letters, Vol. 28, No. 8, 01.08.2007, p. 694-696.

Research output: Contribution to journal › Article

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abstract = "We have studied the stress reliability of low-energy-bandgap high-κ SrTiO3 metal-insulator-metal capacitors under constant voltage stress. By using a high-work-function Ni electrode (5.1 eV), we reduced the degrading effects of stress on the capacitance variation ( Δ C/C), the quadratic voltage coefficient of capacitance (VCC-α), and the long-term reliability, in contrast with using a TaN. The improved stress reliability for the Ni electrode capacitors is attributed to a reduction of carrier injection and trapping.",

keywords = "High work function, Metal-insulator-metal (MIM), Ni, Reliability, SrTiO (STO)",

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AU - Cheng, C. H.

AU - Jhou, K. Y.

AU - Pan, H. C.

AU - Hsiao, C. N.

AU - Chou, C. P.

AU - McAlister, S. P.

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AU - Hwang, H. L.

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AB - We have studied the stress reliability of low-energy-bandgap high-κ SrTiO3 metal-insulator-metal capacitors under constant voltage stress. By using a high-work-function Ni electrode (5.1 eV), we reduced the degrading effects of stress on the capacitance variation ( Δ C/C), the quadratic voltage coefficient of capacitance (VCC-α), and the long-term reliability, in contrast with using a TaN. The improved stress reliability for the Ni electrode capacitors is attributed to a reduction of carrier injection and trapping.

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