Use of a high-work-function Ni electrode to improve the stress reliability of analog SrTiO3 metal-insulator-metal capacitors

K. C. Chiang, Chun-Hu Cheng, K. Y. Jhou, H. C. Pan, C. N. Hsiao, C. P. Chou, S. P. McAlister, Albert Chin, H. L. Hwang

Research output: Contribution to journal › Article

32 Citations (Scopus)

Abstract

We have studied the stress reliability of low-energy-bandgap high-κ SrTiO3 metal-insulator-metal capacitors under constant voltage stress. By using a high-work-function Ni electrode (5.1 eV), we reduced the degrading effects of stress on the capacitance variation ( Δ C/C), the quadratic voltage coefficient of capacitance (VCC-α), and the long-term reliability, in contrast with using a TaN. The improved stress reliability for the Ni electrode capacitors is attributed to a reduction of carrier injection and trapping.

Original languageEnglish
Pages (from-to)694-696
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number8
DOIs
Publication statusPublished - 2007 Aug 1

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Capacitors
Metals
Electrodes
Capacitance
Electric potential
Energy gap
strontium titanium oxide

Keywords

  • High work function
  • Metal-insulator-metal (MIM)
  • Ni
  • Reliability
  • SrTiO (STO)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Use of a high-work-function Ni electrode to improve the stress reliability of analog SrTiO3 metal-insulator-metal capacitors. / Chiang, K. C.; Cheng, Chun-Hu; Jhou, K. Y.; Pan, H. C.; Hsiao, C. N.; Chou, C. P.; McAlister, S. P.; Chin, Albert; Hwang, H. L.

In: IEEE Electron Device Letters, Vol. 28, No. 8, 01.08.2007, p. 694-696.

Research output: Contribution to journal › Article

Chiang, KC, Cheng, C-H, Jhou, KY, Pan, HC, Hsiao, CN, Chou, CP, McAlister, SP, Chin, A & Hwang, HL 2007, 'Use of a high-work-function Ni electrode to improve the stress reliability of analog SrTiO3 metal-insulator-metal capacitors', IEEE Electron Device Letters, vol. 28, no. 8, pp. 694-696. https://doi.org/10.1109/LED.2007.900876
Chiang KC, Cheng C-H, Jhou KY, Pan HC, Hsiao CN, Chou CP et al. Use of a high-work-function Ni electrode to improve the stress reliability of analog SrTiO3 metal-insulator-metal capacitors. IEEE Electron Device Letters. 2007 Aug 1;28(8):694-696. https://doi.org/10.1109/LED.2007.900876
Chiang, K. C. ; Cheng, Chun-Hu ; Jhou, K. Y. ; Pan, H. C. ; Hsiao, C. N. ; Chou, C. P. ; McAlister, S. P. ; Chin, Albert ; Hwang, H. L. / Use of a high-work-function Ni electrode to improve the stress reliability of analog SrTiO3 metal-insulator-metal capacitors. In: IEEE Electron Device Letters. 2007 ; Vol. 28, No. 8. pp. 694-696.
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AU - Cheng, Chun-Hu

AU - Jhou, K. Y.

AU - Pan, H. C.

AU - Hsiao, C. N.

AU - Chou, C. P.

AU - McAlister, S. P.

AU - Chin, Albert

AU - Hwang, H. L.

PY - 2007/8/1

Y1 - 2007/8/1

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AB - We have studied the stress reliability of low-energy-bandgap high-κ SrTiO3 metal-insulator-metal capacitors under constant voltage stress. By using a high-work-function Ni electrode (5.1 eV), we reduced the degrading effects of stress on the capacitance variation ( Δ C/C), the quadratic voltage coefficient of capacitance (VCC-α), and the long-term reliability, in contrast with using a TaN. The improved stress reliability for the Ni electrode capacitors is attributed to a reduction of carrier injection and trapping.

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KW - Ni

KW - Reliability

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