Use of a high-work-function Ni electrode to improve the stress reliability of analog SrTiO3 metal-insulator-metal capacitors

K. C. Chiang, C. H. Cheng, K. Y. Jhou, H. C. Pan, C. N. Hsiao, C. P. Chou, S. P. McAlister, Albert Chin, H. L. Hwang

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

We have studied the stress reliability of low-energy-bandgap high-κ SrTiO3 metal-insulator-metal capacitors under constant voltage stress. By using a high-work-function Ni electrode (5.1 eV), we reduced the degrading effects of stress on the capacitance variation ( Δ C/C), the quadratic voltage coefficient of capacitance (VCC-α), and the long-term reliability, in contrast with using a TaN. The improved stress reliability for the Ni electrode capacitors is attributed to a reduction of carrier injection and trapping.

Original languageEnglish
Pages (from-to)694-696
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number8
DOIs
Publication statusPublished - 2007 Aug 1
Externally publishedYes

Keywords

  • High work function
  • Metal-insulator-metal (MIM)
  • Ni
  • Reliability
  • SrTiO (STO)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Chiang, K. C., Cheng, C. H., Jhou, K. Y., Pan, H. C., Hsiao, C. N., Chou, C. P., McAlister, S. P., Chin, A., & Hwang, H. L. (2007). Use of a high-work-function Ni electrode to improve the stress reliability of analog SrTiO3 metal-insulator-metal capacitors. IEEE Electron Device Letters, 28(8), 694-696. https://doi.org/10.1109/LED.2007.900876