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Unusual helicity-resolved Raman characteristics in silicon surfaces
Kalingarayanpalayam Matheswaran Arun Kumar
, Paphawee Paukatong
, Riichiro Saito
, Nguyen Tuan Hung
*
,
Hsiang Lin Liu
*
*
Corresponding author for this work
Department of Physics
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INIS
surfaces
100%
silicon
100%
helicity
100%
tensors
71%
raman spectra
42%
lasers
28%
comparative evaluations
14%
values
14%
information
14%
increasing
14%
orientation
14%
energy
14%
geometry
14%
resonance
14%
symmetry
14%
spectra
14%
crystallography
14%
backscattering
14%
peaks
14%
excitation
14%
phonons
14%
semiconductor materials
14%
raman spectroscopy
14%
selection rules
14%
renormalization
14%
Chemistry
Silicon
100%
Raman Spectra
66%
First Principle
33%
Selection Rule
33%
Phonon
33%
Raman Intensity
33%
Polarized Raman Spectrum
33%
Raman Spectroscopy
33%
Raman Spectrometry
33%