Universal dependence on the channel conductivity of the competing weak localization and antilocalization in amorphous InGaZnO4 thin-film transistors

Wei Hsiang Wang, Syue Ru Lyu, Elica Heredia, Shu Hao Liu, Pei Hsun Jiang, Po Yung Liao, Ting Chang Chang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We investigate the gate-voltage dependence of the magnetoconductivity of several amorphous InGaZnO4 (a-IGZO) thin-film transistors (TFTs). The magnetoconductivity exhibits gate-voltage-controlled competitions between weak localization (WL) and weak antilocalization (WAL), and the respective weights of WL and WAL contributions demonstrate an intriguing universal dependence on the channel conductivity regardless of the difference in the electrical characteristics of the a-IGZO TFTs. Our findings help build a theoretical interpretation of the competing WL and WAL observed in the electron systems in a-IGZO TFTs.

Original languageEnglish
Article number051103
JournalApplied Physics Express
Volume10
Issue number5
DOIs
Publication statusPublished - 2017 May

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Amorphous films
Thin film transistors
transistors
conductivity
thin films
Electric potential
electric potential
Electrons
electrons

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Universal dependence on the channel conductivity of the competing weak localization and antilocalization in amorphous InGaZnO4 thin-film transistors. / Wang, Wei Hsiang; Lyu, Syue Ru; Heredia, Elica; Liu, Shu Hao; Jiang, Pei Hsun; Liao, Po Yung; Chang, Ting Chang.

In: Applied Physics Express, Vol. 10, No. 5, 051103, 05.2017.

Research output: Contribution to journalArticle

Wang, Wei Hsiang ; Lyu, Syue Ru ; Heredia, Elica ; Liu, Shu Hao ; Jiang, Pei Hsun ; Liao, Po Yung ; Chang, Ting Chang. / Universal dependence on the channel conductivity of the competing weak localization and antilocalization in amorphous InGaZnO4 thin-film transistors. In: Applied Physics Express. 2017 ; Vol. 10, No. 5.
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