Unipolar parity of ferroelectric-antiferroelectric characterized by junction current in crystalline phase Hf1−xZrxO2 diodes

Kuo Yu Hsiang; Chun Yu Liao; Jer Fu Wang; Zhao Feng Lou; Chen Ying Lin; Shih Hung Chiang; Chee Wee Liu; Tuo Hung Hou; Min Hung Lee

doi:10.3390/nano11102685

Unipolar parity of ferroelectric-antiferroelectric characterized by junction current in crystalline phase Hf_1−xZr_xO₂ diodes

Kuo Yu Hsiang, Chun Yu Liao, Jer Fu Wang, Zhao Feng Lou, Chen Ying Lin, Shih Hung Chiang, Chee Wee Liu, Tuo Hung Hou, Min Hung Lee^*

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Ferroelectric (FE) Hf_1−xZr_xO₂ is a potential candidate for emerging memory in artificial intelligence (AI) and neuromorphic computation due to its non-volatility for data storage with natural bi-stable characteristics. This study experimentally characterizes and demonstrates the FE and antiferroelectric (AFE) material properties, which are modulated from doped Zr incorporated in the HfO₂-system, with a diode-junction current for memory operations. Unipolar operations on one of the two hysteretic polarization branch loops of the mixed FE and AFE material give a low program voltage of 3 V with an ON/OFF ratio >100. This also benefits the switching endurance, which reaches >10⁹ cycles. A model based on the polarization switching and tunneling mechanisms is revealed in the (A)FE diode to explain the bipolar and unipolar sweeps. In addition, the proposed FE-AFE diode with Hf_1−xZr_xO₂ has a superior cycling endurance and lower stimulation voltage compared to perovskite FE-diodes due to its scaling capability for resistive FE memory devices.

Original language	English
Article number	2685
Journal	Nanomaterials
Volume	11
Issue number	10
DOIs	https://doi.org/10.3390/nano11102685
Publication status	Published - 2021 Oct

Keywords

Antiferroelectric
Ferroelectric
HfZrO

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science

Access to Document

10.3390/nano11102685

Cite this

@article{7b80f158370f4d80a5e609c66ea30c32,

title = "Unipolar parity of ferroelectric-antiferroelectric characterized by junction current in crystalline phase Hf1−xZrxO2 diodes",

abstract = "Ferroelectric (FE) Hf1−xZrxO2 is a potential candidate for emerging memory in artificial intelligence (AI) and neuromorphic computation due to its non-volatility for data storage with natural bi-stable characteristics. This study experimentally characterizes and demonstrates the FE and antiferroelectric (AFE) material properties, which are modulated from doped Zr incorporated in the HfO2-system, with a diode-junction current for memory operations. Unipolar operations on one of the two hysteretic polarization branch loops of the mixed FE and AFE material give a low program voltage of 3 V with an ON/OFF ratio >100. This also benefits the switching endurance, which reaches >109 cycles. A model based on the polarization switching and tunneling mechanisms is revealed in the (A)FE diode to explain the bipolar and unipolar sweeps. In addition, the proposed FE-AFE diode with Hf1−xZrxO2 has a superior cycling endurance and lower stimulation voltage compared to perovskite FE-diodes due to its scaling capability for resistive FE memory devices.",

keywords = "Antiferroelectric, Ferroelectric, HfZrO",

author = "Hsiang, {Kuo Yu} and Liao, {Chun Yu} and Wang, {Jer Fu} and Lou, {Zhao Feng} and Lin, {Chen Ying} and Chiang, {Shih Hung} and Liu, {Chee Wee} and Hou, {Tuo Hung} and Lee, {Min Hung}",

note = "Publisher Copyright: {\textcopyright} 2021 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2021",

month = oct,

doi = "10.3390/nano11102685",

language = "English",

volume = "11",

journal = "Nanomaterials",

issn = "2079-4991",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

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TY - JOUR

T1 - Unipolar parity of ferroelectric-antiferroelectric characterized by junction current in crystalline phase Hf1−xZrxO2 diodes

AU - Hsiang, Kuo Yu

AU - Liao, Chun Yu

AU - Wang, Jer Fu

AU - Lou, Zhao Feng

AU - Lin, Chen Ying

AU - Chiang, Shih Hung

AU - Liu, Chee Wee

AU - Hou, Tuo Hung

AU - Lee, Min Hung

PY - 2021/10

Y1 - 2021/10

N2 - Ferroelectric (FE) Hf1−xZrxO2 is a potential candidate for emerging memory in artificial intelligence (AI) and neuromorphic computation due to its non-volatility for data storage with natural bi-stable characteristics. This study experimentally characterizes and demonstrates the FE and antiferroelectric (AFE) material properties, which are modulated from doped Zr incorporated in the HfO2-system, with a diode-junction current for memory operations. Unipolar operations on one of the two hysteretic polarization branch loops of the mixed FE and AFE material give a low program voltage of 3 V with an ON/OFF ratio >100. This also benefits the switching endurance, which reaches >109 cycles. A model based on the polarization switching and tunneling mechanisms is revealed in the (A)FE diode to explain the bipolar and unipolar sweeps. In addition, the proposed FE-AFE diode with Hf1−xZrxO2 has a superior cycling endurance and lower stimulation voltage compared to perovskite FE-diodes due to its scaling capability for resistive FE memory devices.

AB - Ferroelectric (FE) Hf1−xZrxO2 is a potential candidate for emerging memory in artificial intelligence (AI) and neuromorphic computation due to its non-volatility for data storage with natural bi-stable characteristics. This study experimentally characterizes and demonstrates the FE and antiferroelectric (AFE) material properties, which are modulated from doped Zr incorporated in the HfO2-system, with a diode-junction current for memory operations. Unipolar operations on one of the two hysteretic polarization branch loops of the mixed FE and AFE material give a low program voltage of 3 V with an ON/OFF ratio >100. This also benefits the switching endurance, which reaches >109 cycles. A model based on the polarization switching and tunneling mechanisms is revealed in the (A)FE diode to explain the bipolar and unipolar sweeps. In addition, the proposed FE-AFE diode with Hf1−xZrxO2 has a superior cycling endurance and lower stimulation voltage compared to perovskite FE-diodes due to its scaling capability for resistive FE memory devices.

KW - Antiferroelectric

KW - Ferroelectric

KW - HfZrO

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