Unipolar Ni/GeOx/PbZr0:5Ti0:5O 3/TaN resistive switching memory

Kun I. Chou; Chun Hu Cheng; Po Chun Chen; Fon Shan Yeh; Albert Chin

doi:10.1143/JJAP.50.121801

Unipolar Ni/GeO_x/PbZr_0:5Ti_0:5O ₃/TaN resistive switching memory

Kun I. Chou^*
, Chun Hu Cheng
, Po Chun Chen
, Fon Shan Yeh
, Albert Chin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

In this study we propose a resistive random-access memory (RRAM) using stacked GeO_x and PbZr_0:5Ti_0:5O₃ (PZT). Under unipolar-mode operation, the bilayers Ni/GeOx/PZT/TaN RRAM shows a large resistance window of >10₂, for 85 °C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeO_x.

Original language	English
Article number	121801
Journal	Japanese Journal of Applied Physics
Volume	50
Issue number	12
DOIs	https://doi.org/10.1143/JJAP.50.121801
Publication status	Published - 2011 Dec
Externally published	Yes

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/JJAP.50.121801

Cite this

@article{d3520d73ad354821a692a3daf3bbcd5b,

title = "Unipolar Ni/GeOx/PbZr0:5Ti0:5O 3/TaN resistive switching memory",

abstract = "In this study we propose a resistive random-access memory (RRAM) using stacked GeOx and PbZr0:5Ti0:5O3 (PZT). Under unipolar-mode operation, the bilayers Ni/GeOx/PZT/TaN RRAM shows a large resistance window of >102, for 85 °C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeOx.",

author = "Chou, \{Kun I.\} and Cheng, \{Chun Hu\} and Chen, \{Po Chun\} and Yeh, \{Fon Shan\} and Albert Chin",

year = "2011",

month = dec,

doi = "10.1143/JJAP.50.121801",

language = "English",

volume = "50",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Unipolar Ni/GeOx/PbZr0:5Ti0:5O 3/TaN resistive switching memory

AU - Chou, Kun I.

AU - Cheng, Chun Hu

AU - Chen, Po Chun

AU - Yeh, Fon Shan

AU - Chin, Albert

PY - 2011/12

Y1 - 2011/12

N2 - In this study we propose a resistive random-access memory (RRAM) using stacked GeOx and PbZr0:5Ti0:5O3 (PZT). Under unipolar-mode operation, the bilayers Ni/GeOx/PZT/TaN RRAM shows a large resistance window of >102, for 85 °C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeOx.

AB - In this study we propose a resistive random-access memory (RRAM) using stacked GeOx and PbZr0:5Ti0:5O3 (PZT). Under unipolar-mode operation, the bilayers Ni/GeOx/PZT/TaN RRAM shows a large resistance window of >102, for 85 °C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeOx.

UR - https://www.scopus.com/pages/publications/82955178485

UR - https://www.scopus.com/pages/publications/82955178485#tab=citedBy

U2 - 10.1143/JJAP.50.121801

DO - 10.1143/JJAP.50.121801

M3 - Article

AN - SCOPUS:82955178485

SN - 0021-4922

VL - 50

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 12

M1 - 121801

ER -

Unipolar Ni/GeO_x/PbZr_0:5Ti_0:5O ₃/TaN resistive switching memory

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this