Unipolar Ni/GeOx/PbZr0:5Ti0:5O 3/TaN resistive switching memory

Kun I. Chou; Chun Hu Cheng; Po Chun Chen; Fon Shan Yeh; Albert Chin

doi:10.1143/JJAP.50.121801

Unipolar Ni/GeO_x/PbZr_0:5Ti_0:5O ₃/TaN resistive switching memory

Kun I. Chou^*, Chun Hu Cheng, Po Chun Chen, Fon Shan Yeh, Albert Chin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this study we propose a resistive random-access memory (RRAM) using stacked GeO_x and PbZr_0:5Ti_0:5O₃ (PZT). Under unipolar-mode operation, the bilayers Ni/GeOx/PZT/TaN RRAM shows a large resistance window of >10₂, for 85 °C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeO_x.

Original language	English
Article number	121801
Journal	Japanese Journal of Applied Physics
Volume	50
Issue number	12
DOIs	https://doi.org/10.1143/JJAP.50.121801
Publication status	Published - 2011 Dec
Externally published	Yes

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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abstract = "In this study we propose a resistive random-access memory (RRAM) using stacked GeOx and PbZr0:5Ti0:5O3 (PZT). Under unipolar-mode operation, the bilayers Ni/GeOx/PZT/TaN RRAM shows a large resistance window of >102, for 85 °C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeOx.",

author = "Chou, {Kun I.} and Cheng, {Chun Hu} and Chen, {Po Chun} and Yeh, {Fon Shan} and Albert Chin",

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language = "English",

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T1 - Unipolar Ni/GeOx/PbZr0:5Ti0:5O 3/TaN resistive switching memory

AU - Chou, Kun I.

AU - Cheng, Chun Hu

AU - Chen, Po Chun

AU - Yeh, Fon Shan

AU - Chin, Albert

PY - 2011/12

Y1 - 2011/12

N2 - In this study we propose a resistive random-access memory (RRAM) using stacked GeOx and PbZr0:5Ti0:5O3 (PZT). Under unipolar-mode operation, the bilayers Ni/GeOx/PZT/TaN RRAM shows a large resistance window of >102, for 85 °C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeOx.

AB - In this study we propose a resistive random-access memory (RRAM) using stacked GeOx and PbZr0:5Ti0:5O3 (PZT). Under unipolar-mode operation, the bilayers Ni/GeOx/PZT/TaN RRAM shows a large resistance window of >102, for 85 °C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeOx.

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Unipolar Ni/GeO_x/PbZr_0:5Ti_0:5O ₃/TaN resistive switching memory

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