Unipolar Ni/GeOx/PbZr0:5Ti0:5O 3/TaN resistive switching memory

Kun I. Chou, Chun Hu Cheng, Po Chun Chen, Fon Shan Yeh, Albert Chin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this study we propose a resistive random-access memory (RRAM) using stacked GeOx and PbZr0:5Ti0:5O3 (PZT). Under unipolar-mode operation, the bilayers Ni/GeOx/PZT/TaN RRAM shows a large resistance window of >102, for 85 °C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeOx.

Original languageEnglish
Article number121801
JournalJapanese Journal of Applied Physics
Volume50
Issue number12
DOIs
Publication statusPublished - 2011 Dec 1

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random access memory
Data storage equipment
cycles
Covalent bonds
covalent bonds
direct current

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Unipolar Ni/GeOx/PbZr0:5Ti0:5O 3/TaN resistive switching memory. / Chou, Kun I.; Cheng, Chun Hu; Chen, Po Chun; Yeh, Fon Shan; Chin, Albert.

In: Japanese Journal of Applied Physics, Vol. 50, No. 12, 121801, 01.12.2011.

Research output: Contribution to journalArticle

Chou, Kun I. ; Cheng, Chun Hu ; Chen, Po Chun ; Yeh, Fon Shan ; Chin, Albert. / Unipolar Ni/GeOx/PbZr0:5Ti0:5O 3/TaN resistive switching memory. In: Japanese Journal of Applied Physics. 2011 ; Vol. 50, No. 12.
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