Uniaxial stress effect and hole mobility in high-Ge content strained SiGe (110) P-channel metal oxide semiconductor field effect transistors

S. Y. Cheng; M. H. Lee; S. T. Chang; C. Y. Lin; K. T. Chen; B. F. Hsieh

doi:10.1016/j.tsf.2013.02.070

Uniaxial stress effect and hole mobility in high-Ge content strained SiGe (110) P-channel metal oxide semiconductor field effect transistors

S. Y. Cheng, M. H. Lee, S. T. Chang^*, C. Y. Lin, K. T. Chen, B. F. Hsieh

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The holemobility in a high Ge-content (110) SiGe inversion layer ismeasured and simulated by a split capacitance-voltage method and a quantized k p method, respectively. The calibrated model reproduces our experimental channelmobilitymeasurements for the biaxial compressive strain SiGe on (110) substrate.We also explore the impact of external mechanical uniaxial stress on the SiGe (110)p-channelmetal oxide semiconductor field effect transistor (PMOSFET). We obtained the corresponding piezoresistance coefficients of the SiGe (110) PMOSFET with external mechanical uniaxial stress parallel and perpendicular to the channel direction. Our study shows the effectiveness in combining externalmechanical uniaxial stress and intrinsic biaxial compressive strain for the SiGe (110) PMOSFET. Crown

Original language	English
Pages (from-to)	487-490
Number of pages	4
Journal	Thin Solid Films
Volume	544
DOIs	https://doi.org/10.1016/j.tsf.2013.02.070
Publication status	Published - 2013 Oct 1

Keywords

Mobility
SiGe
Split capacitance-voltage
Strain
Subband

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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@article{8e9c972f8e5041e4a2e47e6fc7d57556,

title = "Uniaxial stress effect and hole mobility in high-Ge content strained SiGe (110) P-channel metal oxide semiconductor field effect transistors",

abstract = "The holemobility in a high Ge-content (110) SiGe inversion layer ismeasured and simulated by a split capacitance-voltage method and a quantized k p method, respectively. The calibrated model reproduces our experimental channelmobilitymeasurements for the biaxial compressive strain SiGe on (110) substrate.We also explore the impact of external mechanical uniaxial stress on the SiGe (110)p-channelmetal oxide semiconductor field effect transistor (PMOSFET). We obtained the corresponding piezoresistance coefficients of the SiGe (110) PMOSFET with external mechanical uniaxial stress parallel and perpendicular to the channel direction. Our study shows the effectiveness in combining externalmechanical uniaxial stress and intrinsic biaxial compressive strain for the SiGe (110) PMOSFET. Crown",

keywords = "Mobility, SiGe, Split capacitance-voltage, Strain, Subband",

author = "Cheng, {S. Y.} and Lee, {M. H.} and Chang, {S. T.} and Lin, {C. Y.} and Chen, {K. T.} and Hsieh, {B. F.}",

note = "Funding Information: This work was supported by the National Science Council, Taiwan, ROC , under the contract no. NSC-100-2221-E-005-010-MY3 (S.T. Chang). ",

year = "2013",

month = oct,

day = "1",

doi = "10.1016/j.tsf.2013.02.070",

language = "English",

volume = "544",

pages = "487--490",

journal = "Thin Solid Films",

issn = "0040-6090",

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TY - JOUR

T1 - Uniaxial stress effect and hole mobility in high-Ge content strained SiGe (110) P-channel metal oxide semiconductor field effect transistors

AU - Cheng, S. Y.

AU - Lee, M. H.

AU - Chang, S. T.

AU - Lin, C. Y.

AU - Chen, K. T.

AU - Hsieh, B. F.

N1 - Funding Information: This work was supported by the National Science Council, Taiwan, ROC , under the contract no. NSC-100-2221-E-005-010-MY3 (S.T. Chang).

PY - 2013/10/1

Y1 - 2013/10/1

N2 - The holemobility in a high Ge-content (110) SiGe inversion layer ismeasured and simulated by a split capacitance-voltage method and a quantized k p method, respectively. The calibrated model reproduces our experimental channelmobilitymeasurements for the biaxial compressive strain SiGe on (110) substrate.We also explore the impact of external mechanical uniaxial stress on the SiGe (110)p-channelmetal oxide semiconductor field effect transistor (PMOSFET). We obtained the corresponding piezoresistance coefficients of the SiGe (110) PMOSFET with external mechanical uniaxial stress parallel and perpendicular to the channel direction. Our study shows the effectiveness in combining externalmechanical uniaxial stress and intrinsic biaxial compressive strain for the SiGe (110) PMOSFET. Crown

AB - The holemobility in a high Ge-content (110) SiGe inversion layer ismeasured and simulated by a split capacitance-voltage method and a quantized k p method, respectively. The calibrated model reproduces our experimental channelmobilitymeasurements for the biaxial compressive strain SiGe on (110) substrate.We also explore the impact of external mechanical uniaxial stress on the SiGe (110)p-channelmetal oxide semiconductor field effect transistor (PMOSFET). We obtained the corresponding piezoresistance coefficients of the SiGe (110) PMOSFET with external mechanical uniaxial stress parallel and perpendicular to the channel direction. Our study shows the effectiveness in combining externalmechanical uniaxial stress and intrinsic biaxial compressive strain for the SiGe (110) PMOSFET. Crown

KW - Mobility

KW - SiGe

KW - Split capacitance-voltage

KW - Strain

KW - Subband

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DO - 10.1016/j.tsf.2013.02.070

M3 - Article

AN - SCOPUS:84901855012

SN - 0040-6090

VL - 544

SP - 487

EP - 490

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Uniaxial stress effect and hole mobility in high-Ge content strained SiGe (110) P-channel metal oxide semiconductor field effect transistors

Abstract

Keywords

ASJC Scopus subject areas

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