Abstract
The effect of post-annealing on sol-gel-derived ZnO films has been investigated. For these films, structural investigations including analyses of surface morphology and microstructures were carried out by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). Also, optical properties were determined by photoluminescence analysis, ellipsometry and optical pumping measurement. The XRD results indicate that the (002) peak will predominate with increasing annealing temperature. SEM images show that grain size increased with annealing temperature. Moreover, photoluminescence spectra revealed the enhancement in UV emission intensity with annealing temperature, which was attributed to an improvement in crystal quality. Room-temperature ultraviolet random lasing action was observed in the ZnO films. The threshold intensity for the lasing was estimated to be ∼70kW/cm2. Furthermore, it was found that the formation of random laser action is affected by post-annealing, which is associated to the presence of a high-gain medium and efficient light scattering.
Original language | English |
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Pages (from-to) | 3662-3665 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 45 |
Issue number | 4 B |
DOIs | |
Publication status | Published - 2006 Apr 25 |
Keywords
- Sol-gel
- UV lasing
- Zinc oxide
ASJC Scopus subject areas
- General Engineering
- General Physics and Astronomy