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Ultralow switching energy Ni/GeO
x
/HfON/TaN RRAM
C. H. Cheng
, Albert Chin, F. S. Yeh
Research output
:
Contribution to journal
›
Article
›
peer-review
38
Citations (Scopus)
Overview
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x
/HfON/TaN RRAM'. Together they form a unique fingerprint.
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INIS
energy
100%
randomness
100%
tantalum nitrides
100%
power
66%
temperature coefficient
66%
performance
33%
dielectrics
33%
chemical bonds
33%
Engineering
Energy Engineering
100%
Resistive Random Access Memory
100%
Performance
33%
Dielectrics
33%
Covalent
33%
Switching
33%
Temperature Coefficient
33%
Positive Temperature Coefficient
33%
Switching Time
33%
Power Set
33%
Physics
Memory
100%
Coefficients
66%
Temperature
66%
Performance
33%
Dielectrics
33%
Material Science
Resistive Random-Access Memory
100%
Temperature
66%
Dielectric Material
33%
Durability
33%
Covalent Bond
33%