Ultralow switching energy Ni/GeOx/HfON/TaN RRAM

C. H. Cheng; Albert Chin; F. S. Yeh

doi:10.1109/LED.2010.2095820

Ultralow switching energy Ni/GeO_x/HfON/TaN RRAM

C. H. Cheng
, Albert Chin
, F. S. Yeh

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

Using stacked covalent-bond-dielectric GeO_x on metaloxynitride HfON, the NiGeO_x/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 μW (0.1 μA at 3 V), reset power of 0.6 nW (-0.3 nA at 1.8 V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 10^-6 cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metaloxide RRAM.

Original language	English
Article number	5680574
Pages (from-to)	366-368
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	3
DOIs	https://doi.org/10.1109/LED.2010.2095820
Publication status	Published - 2011 Mar
Externally published	Yes

Keywords

GeO
HfON
hopping conduction
resistive random access memory (RRAM)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2010.2095820

Cite this

@article{01e6e779df034fc59e70da657011144f,

title = "Ultralow switching energy Ni/GeOx/HfON/TaN RRAM",

abstract = "Using stacked covalent-bond-dielectric GeOx on metaloxynitride HfON, the NiGeOx/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 μW (0.1 μA at 3 V), reset power of 0.6 nW (-0.3 nA at 1.8 V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 10-6 cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metaloxide RRAM.",

keywords = "GeO, HfON, hopping conduction, resistive random access memory (RRAM)",

author = "Cheng, \{C. H.\} and Albert Chin and Yeh, \{F. S.\}",

note = "Funding Information: Manuscript received October 27, 2010; revised November 10, 2010; accepted November 11, 2010. Date of publication January 6, 2011; date of current version February 23, 2011. This work was supported by the National Science Council of Taiwan. The review of this letter was arranged by Editor S. Kawamura.",

year = "2011",

month = mar,

doi = "10.1109/LED.2010.2095820",

language = "English",

volume = "32",

pages = "366--368",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Ultralow switching energy Ni/GeOx/HfON/TaN RRAM

AU - Cheng, C. H.

AU - Chin, Albert

AU - Yeh, F. S.

N1 - Funding Information: Manuscript received October 27, 2010; revised November 10, 2010; accepted November 11, 2010. Date of publication January 6, 2011; date of current version February 23, 2011. This work was supported by the National Science Council of Taiwan. The review of this letter was arranged by Editor S. Kawamura.

PY - 2011/3

Y1 - 2011/3

N2 - Using stacked covalent-bond-dielectric GeOx on metaloxynitride HfON, the NiGeOx/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 μW (0.1 μA at 3 V), reset power of 0.6 nW (-0.3 nA at 1.8 V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 10-6 cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metaloxide RRAM.

AB - Using stacked covalent-bond-dielectric GeOx on metaloxynitride HfON, the NiGeOx/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 μW (0.1 μA at 3 V), reset power of 0.6 nW (-0.3 nA at 1.8 V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 10-6 cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metaloxide RRAM.

KW - GeO

KW - HfON

KW - hopping conduction

KW - resistive random access memory (RRAM)

UR - https://www.scopus.com/pages/publications/79951941534

UR - https://www.scopus.com/pages/publications/79951941534#tab=citedBy

U2 - 10.1109/LED.2010.2095820

DO - 10.1109/LED.2010.2095820

M3 - Article

AN - SCOPUS:79951941534

SN - 0741-3106

VL - 32

SP - 366

EP - 368

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

M1 - 5680574

ER -