Ultralow switching energy Ni/GeOx/HfON/TaN RRAM

Chun-Hu Cheng, Albert Chin, F. S. Yeh

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

Using stacked covalent-bond-dielectric GeOx on metaloxynitride HfON, the NiGeOx/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 μW (0.1 μA at 3 V), reset power of 0.6 nW (-0.3 nA at 1.8 V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 10-6 cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metaloxide RRAM.

Original languageEnglish
Article number5680574
Pages (from-to)366-368
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number3
DOIs
Publication statusPublished - 2011 Mar 1

Fingerprint

Positive temperature coefficient
Negative temperature coefficient
Data storage equipment
Covalent bonds
Durability

Keywords

  • GeO
  • HfON
  • hopping conduction
  • resistive random access memory (RRAM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Ultralow switching energy Ni/GeOx/HfON/TaN RRAM. / Cheng, Chun-Hu; Chin, Albert; Yeh, F. S.

In: IEEE Electron Device Letters, Vol. 32, No. 3, 5680574, 01.03.2011, p. 366-368.

Research output: Contribution to journalArticle

Cheng, Chun-Hu ; Chin, Albert ; Yeh, F. S. / Ultralow switching energy Ni/GeOx/HfON/TaN RRAM. In: IEEE Electron Device Letters. 2011 ; Vol. 32, No. 3. pp. 366-368.
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