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Ultralow-power Ni/GeO/STO/TaN resistive switching memory
C. H. Cheng
, Albert Chin
, F. S. Yeh
Research output
:
Contribution to journal
›
Article
›
peer-review
21
Citations (Scopus)
Overview
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INIS
power
100%
tantalum nitrides
100%
oxides
66%
metals
66%
cost
33%
randomness
33%
dielectrics
33%
retention
33%
chemical bonds
33%
filaments
33%
temperature coefficient
33%
Material Science
Metal Oxide
100%
Covalent Bond
50%
Resistive Random-Access Memory
50%
Dielectric Material
50%