TY - JOUR
T1 - Ultralow-power Ni/GeO/STO/TaN resistive switching memory
AU - Cheng, C. H.
AU - Chin, Albert
AU - Yeh, F. S.
N1 - Funding Information:
Manuscript received June 4, 2010; revised June 21, 2010; accepted June 22, 2010. Date of publication August 9, 2010; date of current version August 25, 2010. This work was supported by the National Science Council of Taiwan. The review of this letter was arranged by Editor S. Kawamura. C. H. Cheng and F. S. Yeh are with the Department of Electronics Engineering and the Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (e-mail: [email protected]; [email protected]). A. Chin is with the Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (e-mail: [email protected]). Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2010.2055828 Fig. 1. Swept I–V curves of a conventional Ni/STO/TaN RRAM. The arrows indicate the bias sweeping direction.
PY - 2010/9
Y1 - 2010/9
N2 - Using novel stacked covalent-bond-dielectric GeOx (GeO) on metal-oxide SrTiO3 to form a cost-effective Ni/GeO/SrTiO/TaN resistive switching memory, an ultralow set power of small 4 μW (3.5 μA at 1.1 V), a reset power of 16 pW (0.12 nA at 0.13 V), and a large 106 memory window for 105-s retention at 85 °C are realized for the first time. A positive temperature coefficient is measured at low-resistance state and different from the metallic filament in metal-oxide resistive random access memory.
AB - Using novel stacked covalent-bond-dielectric GeOx (GeO) on metal-oxide SrTiO3 to form a cost-effective Ni/GeO/SrTiO/TaN resistive switching memory, an ultralow set power of small 4 μW (3.5 μA at 1.1 V), a reset power of 16 pW (0.12 nA at 0.13 V), and a large 106 memory window for 105-s retention at 85 °C are realized for the first time. A positive temperature coefficient is measured at low-resistance state and different from the metallic filament in metal-oxide resistive random access memory.
KW - GeO
KW - SrTiO (STO)
KW - resistive random accessmemory (RRAM)
UR - http://www.scopus.com/inward/record.url?scp=77956169769&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77956169769&partnerID=8YFLogxK
U2 - 10.1109/LED.2010.2055828
DO - 10.1109/LED.2010.2055828
M3 - Article
AN - SCOPUS:77956169769
SN - 0741-3106
VL - 31
SP - 1020
EP - 1022
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 9
M1 - 5545348
ER -