@article{60809514d2b34fae9d756c3df6410b2f,
title = "Ultralow-power Ni/GeO/STO/TaN resistive switching memory",
abstract = "Using novel stacked covalent-bond-dielectric GeOx (GeO) on metal-oxide SrTiO3 to form a cost-effective Ni/GeO/SrTiO/TaN resistive switching memory, an ultralow set power of small 4 μW (3.5 μA at 1.1 V), a reset power of 16 pW (0.12 nA at 0.13 V), and a large 106 memory window for 105-s retention at 85 °C are realized for the first time. A positive temperature coefficient is measured at low-resistance state and different from the metallic filament in metal-oxide resistive random access memory.",
keywords = "GeO, resistive random accessmemory (RRAM), SrTiO (STO)",
author = "Cheng, {C. H.} and Albert Chin and Yeh, {F. S.}",
note = "Funding Information: Manuscript received June 4, 2010; revised June 21, 2010; accepted June 22, 2010. Date of publication August 9, 2010; date of current version August 25, 2010. This work was supported by the National Science Council of Taiwan. The review of this letter was arranged by Editor S. Kawamura. C. H. Cheng and F. S. Yeh are with the Department of Electronics Engineering and the Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (e-mail: feldcheng@hotmail.tw; fsyeh@ee.nthu.edu.tw). A. Chin is with the Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (e-mail: albert_achin@hotmail.com). Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2010.2055828 Fig. 1. Swept I–V curves of a conventional Ni/STO/TaN RRAM. The arrows indicate the bias sweeping direction.",
year = "2010",
month = sep,
doi = "10.1109/LED.2010.2055828",
language = "English",
volume = "31",
pages = "1020--1022",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",
}