Ultralow-power Ni/GeO/STO/TaN resistive switching memory

Chun-Hu Cheng, Albert Chin, F. S. Yeh

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Using novel stacked covalent-bond-dielectric GeOx (GeO) on metal-oxide SrTiO3 to form a cost-effective Ni/GeO/SrTiO/TaN resistive switching memory, an ultralow set power of small 4 μW (3.5 μA at 1.1 V), a reset power of 16 pW (0.12 nA at 0.13 V), and a large 106 memory window for 105-s retention at 85 °C are realized for the first time. A positive temperature coefficient is measured at low-resistance state and different from the metallic filament in metal-oxide resistive random access memory.

Original languageEnglish
Article number5545348
Pages (from-to)1020-1022
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number9
DOIs
Publication statusPublished - 2010 Sep 1

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Data storage equipment
Oxides
Metals
Positive temperature coefficient
Covalent bonds
Costs
strontium titanium oxide

Keywords

  • GeO
  • SrTiO (STO)
  • resistive random accessmemory (RRAM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Ultralow-power Ni/GeO/STO/TaN resistive switching memory. / Cheng, Chun-Hu; Chin, Albert; Yeh, F. S.

In: IEEE Electron Device Letters, Vol. 31, No. 9, 5545348, 01.09.2010, p. 1020-1022.

Research output: Contribution to journalArticle

Cheng, Chun-Hu ; Chin, Albert ; Yeh, F. S. / Ultralow-power Ni/GeO/STO/TaN resistive switching memory. In: IEEE Electron Device Letters. 2010 ; Vol. 31, No. 9. pp. 1020-1022.
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