Ultrafast carrier dynamics in ZnO nanorods

Chi Kuang Sun; Shih Ze Sun; Kung Hsuan Lin; Kenneth Yi Jie Zhang; Hsiang Lin Liu; Sai Chang Liu; Jih Jen Wu

doi:10.1063/1.1989444

Ultrafast carrier dynamics in ZnO nanorods

Chi Kuang Sun^*, Shih Ze Sun, Kung Hsuan Lin, Kenneth Yi Jie Zhang, Hsiang Lin Liu, Sai Chang Liu, Jih Jen Wu

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

64 Citations (Scopus)

Abstract

Free exciton and above-band-gap free carrier dynamics in ZnO nanorods have been investigated at room temperature with a femtosecond transient transmission measurement. Following the photoexcitation of above-band-gap free carriers, an extremely fast external thermalization time on the order of 200 fs can be observed. Under high excitation, hot phonon effects were found to delay the carrier cooling process. While the photoexcitation energy was tuned to match the free exciton transition, stable exciton formation can be uncovered while no evident exciton ionization process can be found unless the photoexcited exciton density exceeded the Mott density.

Original language	English
Article number	023106
Journal	Applied Physics Letters
Volume	87
Issue number	2
DOIs	https://doi.org/10.1063/1.1989444
Publication status	Published - 2005 Jul 11

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1989444

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title = "Ultrafast carrier dynamics in ZnO nanorods",

abstract = "Free exciton and above-band-gap free carrier dynamics in ZnO nanorods have been investigated at room temperature with a femtosecond transient transmission measurement. Following the photoexcitation of above-band-gap free carriers, an extremely fast external thermalization time on the order of 200 fs can be observed. Under high excitation, hot phonon effects were found to delay the carrier cooling process. While the photoexcitation energy was tuned to match the free exciton transition, stable exciton formation can be uncovered while no evident exciton ionization process can be found unless the photoexcited exciton density exceeded the Mott density.",

author = "Sun, {Chi Kuang} and Sun, {Shih Ze} and Lin, {Kung Hsuan} and Zhang, {Kenneth Yi Jie} and Liu, {Hsiang Lin} and Liu, {Sai Chang} and Wu, {Jih Jen}",

note = "Funding Information: This work was sponsored by the National Science Council of Taiwan, R.O.C. under Grant No. 93-2120-M-002-004. ",

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AU - Sun, Chi Kuang

AU - Sun, Shih Ze

AU - Lin, Kung Hsuan

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AU - Liu, Hsiang Lin

AU - Liu, Sai Chang

AU - Wu, Jih Jen

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N2 - Free exciton and above-band-gap free carrier dynamics in ZnO nanorods have been investigated at room temperature with a femtosecond transient transmission measurement. Following the photoexcitation of above-band-gap free carriers, an extremely fast external thermalization time on the order of 200 fs can be observed. Under high excitation, hot phonon effects were found to delay the carrier cooling process. While the photoexcitation energy was tuned to match the free exciton transition, stable exciton formation can be uncovered while no evident exciton ionization process can be found unless the photoexcited exciton density exceeded the Mott density.

AB - Free exciton and above-band-gap free carrier dynamics in ZnO nanorods have been investigated at room temperature with a femtosecond transient transmission measurement. Following the photoexcitation of above-band-gap free carriers, an extremely fast external thermalization time on the order of 200 fs can be observed. Under high excitation, hot phonon effects were found to delay the carrier cooling process. While the photoexcitation energy was tuned to match the free exciton transition, stable exciton formation can be uncovered while no evident exciton ionization process can be found unless the photoexcited exciton density exceeded the Mott density.

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Ultrafast carrier dynamics in ZnO nanorods

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