Ultrafast carrier dynamics in ZnO nanorods

Chi Kuang Sun, Shih Ze Sun, Kung Hsuan Lin, Kenneth Yi Jie Zhang, Hsiang Lin Liu, Sai Chang Liu, Jih Jen Wu

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58 Citations (Scopus)

Abstract

Free exciton and above-band-gap free carrier dynamics in ZnO nanorods have been investigated at room temperature with a femtosecond transient transmission measurement. Following the photoexcitation of above-band-gap free carriers, an extremely fast external thermalization time on the order of 200 fs can be observed. Under high excitation, hot phonon effects were found to delay the carrier cooling process. While the photoexcitation energy was tuned to match the free exciton transition, stable exciton formation can be uncovered while no evident exciton ionization process can be found unless the photoexcited exciton density exceeded the Mott density.

Original languageEnglish
Article number023106
JournalApplied Physics Letters
Volume87
Issue number2
DOIs
Publication statusPublished - 2005 Jul 11

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Sun, C. K., Sun, S. Z., Lin, K. H., Zhang, K. Y. J., Liu, H. L., Liu, S. C., & Wu, J. J. (2005). Ultrafast carrier dynamics in ZnO nanorods. Applied Physics Letters, 87(2), [023106]. https://doi.org/10.1063/1.1989444