Ultra-low switching power rram using hopping conduction mechanism

Albert Chin, Chun-Hu Cheng, Y. C. Chiu, Z. W. Zheng, M. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Very low 0.4 pJ switching energy, fast 50 ns switching time, large >10 5 retention window at 85°C, and 106 cycling endurance were achieved in Ni/GeOx/SrTiOy/TaN RRAM. This RRAM device has negative temperature coefficient (TC) and ruled by bulk hopping conduction mechanism that lead to potentially better distribution. This is in sharp contrast to the positive TC and randomly distributed metallic filament RRAM. Such low switching energy is necessary for large-array NAND memory application, a unique merit of this RRAM device.

Original languageEnglish
Title of host publicationDielectric Materials and Metals for Nanoelectronics and Photonics 10
Pages3-8
Number of pages6
Edition4
DOIs
Publication statusPublished - 2012 Dec 1
EventSymposium on Dielectric Materials and Metals for Nanoelectronics and Photonics - 10 - 222nd ECS Meeting - Honolulu, HI, United States
Duration: 2012 Oct 72012 Oct 12

Publication series

NameECS Transactions
Number4
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on Dielectric Materials and Metals for Nanoelectronics and Photonics - 10 - 222nd ECS Meeting
CountryUnited States
CityHonolulu, HI
Period12/10/712/10/12

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Chin, A., Cheng, C-H., Chiu, Y. C., Zheng, Z. W., & Liu, M. (2012). Ultra-low switching power rram using hopping conduction mechanism. In Dielectric Materials and Metals for Nanoelectronics and Photonics 10 (4 ed., pp. 3-8). (ECS Transactions; Vol. 50, No. 4). https://doi.org/10.1149/05004.0003ecst