Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si 1-x-yGexCy thin films on Si(0 0 1) with ethylene (C2H4) precursor as carbon source

P. S. Chen*, S. W. Lee, Y. H. Liu, M. H. Lee, M. J. Tsai, C. W. Liu

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si 1-x-yGexCy thin films on Si(0 0 1) with ethylene (C2H4) precursor as carbon source'. Together they form a unique fingerprint.

INIS

Chemistry

Material Science

Physics

Engineering