Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si 1-x-yGexCy thin films on Si(0 0 1) with ethylene (C2H4) precursor as carbon source

P. S. Chen*, S. W. Lee, Y. H. Liu, M. H. Lee, M. J. Tsai, C. W. Liu

*Corresponding author for this work

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