Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si 1-x-y Ge x C y thin films on Si(0 0 1) with ethylene (C 2 H 4 ) precursor as carbon source

P. S. Chen, S. W. Lee, Y. H. Liu, Min-Hung Lee, M. J. Tsai, C. W. Liu

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The incorporation of substitutional carbon (C sub ) in low-temperature epitaxial Si 1-x-y Ge x C y thin films using SiH 4 , GeH 4 and C 2 H 4 by ultra-high-vacuum chemical vapor deposition was investigated in this work. The Si 1-x-y Ge x C y alloys have been grown at a temperature range from 550 to 600 °C. The C sub content in Si 1-x-y Ge x C y increases with increasing C 2 H 4 partial pressure under the same SiH 4 and GeH 4 condition. The addition of excessive C 2 H 4 causes the degradation of Si 1-x-y Ge x C y crystallinity, surface roughening and the suppression of Ge incorporation. The C-C double bonds in C 2 H 4 were responsible for the highest percentage of C sub , only 0.2%, incorporated in Si 0.8-y Ge 0.2 C y . The Ge, B and C concentration were determined by secondary ion mass spectroscopy (SIMS). The total C atoms incorporation efficiency is ∼0.05. The maximum concentration of C sub in Si 1-x-y Ge x C y increases with the decrease of Ge content. In the ambient of hydride-based CVD at low-growth pressure and temperature, the presence of GeH 4 would impede the incorporation of C sub in Si 1-x-y Ge x C y /Si heterostructure using C 2 H 4 as C source.

Original languageEnglish
Pages (from-to)15-19
Number of pages5
JournalMaterials Science in Semiconductor Processing
Volume8
Issue number1-3 SPEC. ISS.
DOIs
Publication statusPublished - 2005 Feb 1

Fingerprint

Ultrahigh vacuum
ultrahigh vacuum
Chemical vapor deposition
Ethylene
ethylene
Carbon
vapor deposition
Thin films
carbon
thin films
hydrides
partial pressure
crystallinity
mass spectroscopy
retarding
degradation
Hydrides
Partial pressure
Temperature
temperature

Keywords

  • Carbon
  • Ethylene
  • Germanium
  • Silicon
  • UHV/CVD

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si 1-x-y Ge x C y thin films on Si(0 0 1) with ethylene (C 2 H 4 ) precursor as carbon source . / Chen, P. S.; Lee, S. W.; Liu, Y. H.; Lee, Min-Hung; Tsai, M. J.; Liu, C. W.

In: Materials Science in Semiconductor Processing, Vol. 8, No. 1-3 SPEC. ISS., 01.02.2005, p. 15-19.

Research output: Contribution to journalArticle

@article{8643965257a54c6bb2c119136326886d,
title = "Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si 1-x-y Ge x C y thin films on Si(0 0 1) with ethylene (C 2 H 4 ) precursor as carbon source",
abstract = "The incorporation of substitutional carbon (C sub ) in low-temperature epitaxial Si 1-x-y Ge x C y thin films using SiH 4 , GeH 4 and C 2 H 4 by ultra-high-vacuum chemical vapor deposition was investigated in this work. The Si 1-x-y Ge x C y alloys have been grown at a temperature range from 550 to 600 °C. The C sub content in Si 1-x-y Ge x C y increases with increasing C 2 H 4 partial pressure under the same SiH 4 and GeH 4 condition. The addition of excessive C 2 H 4 causes the degradation of Si 1-x-y Ge x C y crystallinity, surface roughening and the suppression of Ge incorporation. The C-C double bonds in C 2 H 4 were responsible for the highest percentage of C sub , only 0.2{\%}, incorporated in Si 0.8-y Ge 0.2 C y . The Ge, B and C concentration were determined by secondary ion mass spectroscopy (SIMS). The total C atoms incorporation efficiency is ∼0.05. The maximum concentration of C sub in Si 1-x-y Ge x C y increases with the decrease of Ge content. In the ambient of hydride-based CVD at low-growth pressure and temperature, the presence of GeH 4 would impede the incorporation of C sub in Si 1-x-y Ge x C y /Si heterostructure using C 2 H 4 as C source.",
keywords = "Carbon, Ethylene, Germanium, Silicon, UHV/CVD",
author = "Chen, {P. S.} and Lee, {S. W.} and Liu, {Y. H.} and Min-Hung Lee and Tsai, {M. J.} and Liu, {C. W.}",
year = "2005",
month = "2",
day = "1",
doi = "10.1016/j.mssp.2004.09.052",
language = "English",
volume = "8",
pages = "15--19",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Elsevier Limited",
number = "1-3 SPEC. ISS.",

}

TY - JOUR

T1 - Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si 1-x-y Ge x C y thin films on Si(0 0 1) with ethylene (C 2 H 4 ) precursor as carbon source

AU - Chen, P. S.

AU - Lee, S. W.

AU - Liu, Y. H.

AU - Lee, Min-Hung

AU - Tsai, M. J.

AU - Liu, C. W.

PY - 2005/2/1

Y1 - 2005/2/1

N2 - The incorporation of substitutional carbon (C sub ) in low-temperature epitaxial Si 1-x-y Ge x C y thin films using SiH 4 , GeH 4 and C 2 H 4 by ultra-high-vacuum chemical vapor deposition was investigated in this work. The Si 1-x-y Ge x C y alloys have been grown at a temperature range from 550 to 600 °C. The C sub content in Si 1-x-y Ge x C y increases with increasing C 2 H 4 partial pressure under the same SiH 4 and GeH 4 condition. The addition of excessive C 2 H 4 causes the degradation of Si 1-x-y Ge x C y crystallinity, surface roughening and the suppression of Ge incorporation. The C-C double bonds in C 2 H 4 were responsible for the highest percentage of C sub , only 0.2%, incorporated in Si 0.8-y Ge 0.2 C y . The Ge, B and C concentration were determined by secondary ion mass spectroscopy (SIMS). The total C atoms incorporation efficiency is ∼0.05. The maximum concentration of C sub in Si 1-x-y Ge x C y increases with the decrease of Ge content. In the ambient of hydride-based CVD at low-growth pressure and temperature, the presence of GeH 4 would impede the incorporation of C sub in Si 1-x-y Ge x C y /Si heterostructure using C 2 H 4 as C source.

AB - The incorporation of substitutional carbon (C sub ) in low-temperature epitaxial Si 1-x-y Ge x C y thin films using SiH 4 , GeH 4 and C 2 H 4 by ultra-high-vacuum chemical vapor deposition was investigated in this work. The Si 1-x-y Ge x C y alloys have been grown at a temperature range from 550 to 600 °C. The C sub content in Si 1-x-y Ge x C y increases with increasing C 2 H 4 partial pressure under the same SiH 4 and GeH 4 condition. The addition of excessive C 2 H 4 causes the degradation of Si 1-x-y Ge x C y crystallinity, surface roughening and the suppression of Ge incorporation. The C-C double bonds in C 2 H 4 were responsible for the highest percentage of C sub , only 0.2%, incorporated in Si 0.8-y Ge 0.2 C y . The Ge, B and C concentration were determined by secondary ion mass spectroscopy (SIMS). The total C atoms incorporation efficiency is ∼0.05. The maximum concentration of C sub in Si 1-x-y Ge x C y increases with the decrease of Ge content. In the ambient of hydride-based CVD at low-growth pressure and temperature, the presence of GeH 4 would impede the incorporation of C sub in Si 1-x-y Ge x C y /Si heterostructure using C 2 H 4 as C source.

KW - Carbon

KW - Ethylene

KW - Germanium

KW - Silicon

KW - UHV/CVD

UR - http://www.scopus.com/inward/record.url?scp=13244254063&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=13244254063&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2004.09.052

DO - 10.1016/j.mssp.2004.09.052

M3 - Article

VL - 8

SP - 15

EP - 19

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

IS - 1-3 SPEC. ISS.

ER -