Type-II heterojunction organic/inorganic hybrid non-volatile memory based on FeS2 nanocrystals embedded in poly(3-hexylthiophene)

C. W. Lin; D. Y. Wang; Y. Tai; Y. T. Jiang; M. C. Chen; C. C. Chen; Y. J. Yang; Y. F. Chen

doi:10.1088/0022-3727/44/29/292002

Type-II heterojunction organic/inorganic hybrid non-volatile memory based on FeS₂ nanocrystals embedded in poly(3-hexylthiophene)

C. W. Lin^*
, D. Y. Wang
, Y. Tai
, Y. T. Jiang
, M. C. Chen
, C. C. Chen
, Y. J. Yang
, Y. F. Chen

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Electrical bistable behaviour was demonstrated in memory devices based on n-type FeS₂ nanocrystals (NCs) embedded in a p-type poly(3-hexylthiophene) (P3HT) matrix. An organic/inorganic hybrid non-volatile memory device with a type-II band alignment, fabricated by a spin-coating process, exhibited electrical bistable characteristics. The bistable behaviour of carrier transport can be well described through the space-charge-limited current model. The small amount of FeS₂ NCs in this device serve as an excellent charge trapping medium arising from the type-II band alignment between FeS₂ and P3HT. Our study suggests a new way to integrate non-volatile memory with other devices such as transistor or photovoltaic since the presented FeS₂/P3HT offers a type-II band alignment.

Original language	English
Article number	292002
Journal	Journal of Physics D: Applied Physics
Volume	44
Issue number	29
DOIs	https://doi.org/10.1088/0022-3727/44/29/292002
Publication status	Published - 2011 Jul 27

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

Access to Document

10.1088/0022-3727/44/29/292002

Cite this

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title = "Type-II heterojunction organic/inorganic hybrid non-volatile memory based on FeS2 nanocrystals embedded in poly(3-hexylthiophene)",

abstract = "Electrical bistable behaviour was demonstrated in memory devices based on n-type FeS2 nanocrystals (NCs) embedded in a p-type poly(3-hexylthiophene) (P3HT) matrix. An organic/inorganic hybrid non-volatile memory device with a type-II band alignment, fabricated by a spin-coating process, exhibited electrical bistable characteristics. The bistable behaviour of carrier transport can be well described through the space-charge-limited current model. The small amount of FeS2 NCs in this device serve as an excellent charge trapping medium arising from the type-II band alignment between FeS2 and P3HT. Our study suggests a new way to integrate non-volatile memory with other devices such as transistor or photovoltaic since the presented FeS2/P3HT offers a type-II band alignment.",

author = "Lin, \{C. W.\} and Wang, \{D. Y.\} and Y. Tai and Jiang, \{Y. T.\} and Chen, \{M. C.\} and Chen, \{C. C.\} and Yang, \{Y. J.\} and Chen, \{Y. F.\}",

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AU - Lin, C. W.

AU - Wang, D. Y.

AU - Tai, Y.

AU - Jiang, Y. T.

AU - Chen, M. C.

AU - Chen, C. C.

AU - Yang, Y. J.

AU - Chen, Y. F.

PY - 2011/7/27

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N2 - Electrical bistable behaviour was demonstrated in memory devices based on n-type FeS2 nanocrystals (NCs) embedded in a p-type poly(3-hexylthiophene) (P3HT) matrix. An organic/inorganic hybrid non-volatile memory device with a type-II band alignment, fabricated by a spin-coating process, exhibited electrical bistable characteristics. The bistable behaviour of carrier transport can be well described through the space-charge-limited current model. The small amount of FeS2 NCs in this device serve as an excellent charge trapping medium arising from the type-II band alignment between FeS2 and P3HT. Our study suggests a new way to integrate non-volatile memory with other devices such as transistor or photovoltaic since the presented FeS2/P3HT offers a type-II band alignment.

AB - Electrical bistable behaviour was demonstrated in memory devices based on n-type FeS2 nanocrystals (NCs) embedded in a p-type poly(3-hexylthiophene) (P3HT) matrix. An organic/inorganic hybrid non-volatile memory device with a type-II band alignment, fabricated by a spin-coating process, exhibited electrical bistable characteristics. The bistable behaviour of carrier transport can be well described through the space-charge-limited current model. The small amount of FeS2 NCs in this device serve as an excellent charge trapping medium arising from the type-II band alignment between FeS2 and P3HT. Our study suggests a new way to integrate non-volatile memory with other devices such as transistor or photovoltaic since the presented FeS2/P3HT offers a type-II band alignment.

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