Type-II heterojunction organic/inorganic hybrid non-volatile memory based on FeS2 nanocrystals embedded in poly(3-hexylthiophene)

C. W. Lin; D. Y. Wang; Y. Tai; Y. T. Jiang; M. C. Chen; C. C. Chen; Y. J. Yang; Y. F. Chen

doi:10.1088/0022-3727/44/29/292002

Type-II heterojunction organic/inorganic hybrid non-volatile memory based on FeS₂ nanocrystals embedded in poly(3-hexylthiophene)

C. W. Lin^*, D. Y. Wang, Y. Tai, Y. T. Jiang, M. C. Chen, C. C. Chen, Y. J. Yang, Y. F. Chen

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Electrical bistable behaviour was demonstrated in memory devices based on n-type FeS₂ nanocrystals (NCs) embedded in a p-type poly(3-hexylthiophene) (P3HT) matrix. An organic/inorganic hybrid non-volatile memory device with a type-II band alignment, fabricated by a spin-coating process, exhibited electrical bistable characteristics. The bistable behaviour of carrier transport can be well described through the space-charge-limited current model. The small amount of FeS₂ NCs in this device serve as an excellent charge trapping medium arising from the type-II band alignment between FeS₂ and P3HT. Our study suggests a new way to integrate non-volatile memory with other devices such as transistor or photovoltaic since the presented FeS₂/P3HT offers a type-II band alignment.

Original language	English
Article number	292002
Journal	Journal of Physics D: Applied Physics
Volume	44
Issue number	29
DOIs	https://doi.org/10.1088/0022-3727/44/29/292002
Publication status	Published - 2011 Jul 27

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1088/0022-3727/44/29/292002

Cite this

@article{b74e3587038b4fb29827ad4ef890833f,

title = "Type-II heterojunction organic/inorganic hybrid non-volatile memory based on FeS2 nanocrystals embedded in poly(3-hexylthiophene)",

abstract = "Electrical bistable behaviour was demonstrated in memory devices based on n-type FeS2 nanocrystals (NCs) embedded in a p-type poly(3-hexylthiophene) (P3HT) matrix. An organic/inorganic hybrid non-volatile memory device with a type-II band alignment, fabricated by a spin-coating process, exhibited electrical bistable characteristics. The bistable behaviour of carrier transport can be well described through the space-charge-limited current model. The small amount of FeS2 NCs in this device serve as an excellent charge trapping medium arising from the type-II band alignment between FeS2 and P3HT. Our study suggests a new way to integrate non-volatile memory with other devices such as transistor or photovoltaic since the presented FeS2/P3HT offers a type-II band alignment.",

author = "Lin, {C. W.} and Wang, {D. Y.} and Y. Tai and Jiang, {Y. T.} and Chen, {M. C.} and Chen, {C. C.} and Yang, {Y. J.} and Chen, {Y. F.}",

year = "2011",

month = jul,

day = "27",

doi = "10.1088/0022-3727/44/29/292002",

language = "English",

volume = "44",

journal = "Journal of Physics D: Applied Physics",

issn = "0022-3727",

publisher = "IOP Publishing Ltd.",

number = "29",

}

TY - JOUR

T1 - Type-II heterojunction organic/inorganic hybrid non-volatile memory based on FeS2 nanocrystals embedded in poly(3-hexylthiophene)

AU - Lin, C. W.

AU - Wang, D. Y.

AU - Tai, Y.

AU - Jiang, Y. T.

AU - Chen, M. C.

AU - Chen, C. C.

AU - Yang, Y. J.

AU - Chen, Y. F.

PY - 2011/7/27

Y1 - 2011/7/27

N2 - Electrical bistable behaviour was demonstrated in memory devices based on n-type FeS2 nanocrystals (NCs) embedded in a p-type poly(3-hexylthiophene) (P3HT) matrix. An organic/inorganic hybrid non-volatile memory device with a type-II band alignment, fabricated by a spin-coating process, exhibited electrical bistable characteristics. The bistable behaviour of carrier transport can be well described through the space-charge-limited current model. The small amount of FeS2 NCs in this device serve as an excellent charge trapping medium arising from the type-II band alignment between FeS2 and P3HT. Our study suggests a new way to integrate non-volatile memory with other devices such as transistor or photovoltaic since the presented FeS2/P3HT offers a type-II band alignment.

AB - Electrical bistable behaviour was demonstrated in memory devices based on n-type FeS2 nanocrystals (NCs) embedded in a p-type poly(3-hexylthiophene) (P3HT) matrix. An organic/inorganic hybrid non-volatile memory device with a type-II band alignment, fabricated by a spin-coating process, exhibited electrical bistable characteristics. The bistable behaviour of carrier transport can be well described through the space-charge-limited current model. The small amount of FeS2 NCs in this device serve as an excellent charge trapping medium arising from the type-II band alignment between FeS2 and P3HT. Our study suggests a new way to integrate non-volatile memory with other devices such as transistor or photovoltaic since the presented FeS2/P3HT offers a type-II band alignment.

UR - http://www.scopus.com/inward/record.url?scp=79960284454&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960284454&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/44/29/292002

DO - 10.1088/0022-3727/44/29/292002

M3 - Article

AN - SCOPUS:79960284454

SN - 0022-3727

VL - 44

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 29

M1 - 292002

ER -