Type-II heterojunction organic/inorganic hybrid non-volatile memory based on FeS2 nanocrystals embedded in poly(3-hexylthiophene)

C. W. Lin, D. Y. Wang, Y. Tai, Y. T. Jiang, M. C. Chen, C. C. Chen, Y. J. Yang, Y. F. Chen

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Electrical bistable behaviour was demonstrated in memory devices based on n-type FeS2 nanocrystals (NCs) embedded in a p-type poly(3-hexylthiophene) (P3HT) matrix. An organic/inorganic hybrid non-volatile memory device with a type-II band alignment, fabricated by a spin-coating process, exhibited electrical bistable characteristics. The bistable behaviour of carrier transport can be well described through the space-charge-limited current model. The small amount of FeS2 NCs in this device serve as an excellent charge trapping medium arising from the type-II band alignment between FeS2 and P3HT. Our study suggests a new way to integrate non-volatile memory with other devices such as transistor or photovoltaic since the presented FeS2/P3HT offers a type-II band alignment.

Original languageEnglish
Article number292002
JournalJournal of Physics D: Applied Physics
Volume44
Issue number29
DOIs
Publication statusPublished - 2011 Jul 27

Fingerprint

Nanocrystals
Heterojunctions
heterojunctions
nanocrystals
Data storage equipment
alignment
Charge trapping
Carrier transport
Spin coating
Electric space charge
Transistors
coating
space charge
transistors
trapping
poly(3-hexylthiophene)
matrices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Type-II heterojunction organic/inorganic hybrid non-volatile memory based on FeS2 nanocrystals embedded in poly(3-hexylthiophene). / Lin, C. W.; Wang, D. Y.; Tai, Y.; Jiang, Y. T.; Chen, M. C.; Chen, C. C.; Yang, Y. J.; Chen, Y. F.

In: Journal of Physics D: Applied Physics, Vol. 44, No. 29, 292002, 27.07.2011.

Research output: Contribution to journalArticle

Lin, C. W. ; Wang, D. Y. ; Tai, Y. ; Jiang, Y. T. ; Chen, M. C. ; Chen, C. C. ; Yang, Y. J. ; Chen, Y. F. / Type-II heterojunction organic/inorganic hybrid non-volatile memory based on FeS2 nanocrystals embedded in poly(3-hexylthiophene). In: Journal of Physics D: Applied Physics. 2011 ; Vol. 44, No. 29.
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