Type-II heterojunction organic/inorganic hybrid non-volatile memory based on FeS2 nanocrystals embedded in poly(3-hexylthiophene)

C. W. Lin, D. Y. Wang, Y. Tai, Y. T. Jiang, M. C. Chen, C. C. Chen, Y. J. Yang, Y. F. Chen

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


Electrical bistable behaviour was demonstrated in memory devices based on n-type FeS2 nanocrystals (NCs) embedded in a p-type poly(3-hexylthiophene) (P3HT) matrix. An organic/inorganic hybrid non-volatile memory device with a type-II band alignment, fabricated by a spin-coating process, exhibited electrical bistable characteristics. The bistable behaviour of carrier transport can be well described through the space-charge-limited current model. The small amount of FeS2 NCs in this device serve as an excellent charge trapping medium arising from the type-II band alignment between FeS2 and P3HT. Our study suggests a new way to integrate non-volatile memory with other devices such as transistor or photovoltaic since the presented FeS2/P3HT offers a type-II band alignment.

Original languageEnglish
Article number292002
JournalJournal of Physics D: Applied Physics
Issue number29
Publication statusPublished - 2011 Jul 27

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films


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