Two-dimensional electronic transport and surface electron accumulation in MoS2

M. D. Siao, W. C. Shen, R. S. Chen, Z. W. Chang, M. C. Shih, Y. P. Chiu, C. M. Cheng

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Because the surface-to-volume ratio of quasi-two-dimensional materials is extremely high, understanding their surface characteristics is crucial for practically controlling their intrinsic properties and fabricating p-type and n-type layered semiconductors. Van der Waals crystals are expected to have an inert surface because of the absence of dangling bonds. However, here we show that the surface of high-quality synthesized molybdenum disulfide (MoS2) is a major n-doping source. The surface electron concentration of MoS2 is nearly four orders of magnitude higher than that of its inner bulk. Substantial thickness-dependent conductivity in MoS2 nanoflakes was observed. The transfer length method suggested the current transport in MoS2 following a two-dimensional behavior rather than the conventional three-dimensional mode. Scanning tunneling microscopy and angle-resolved photoemission spectroscopy measurements confirmed the presence of surface electron accumulation in this layered material. Notably, the in situ-cleaved surface exhibited a nearly intrinsic state without electron accumulation.

Original languageEnglish
Article number1442
JournalNature Communications
Volume9
Issue number1
DOIs
Publication statusPublished - 2018 Dec 1

Fingerprint

Electron Transport
Electrons
Scanning Tunnelling Microscopy
electronics
Photoelectron Spectroscopy
Semiconductors
electrons
molybdenum disulfides
n-type semiconductors
Dangling bonds
Scanning tunneling microscopy
Photoelectron spectroscopy
electron states
Electron energy levels
scanning tunneling microscopy
photoelectric emission
Doping (additives)
conductivity
Crystals
spectroscopy

ASJC Scopus subject areas

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

Cite this

Siao, M. D., Shen, W. C., Chen, R. S., Chang, Z. W., Shih, M. C., Chiu, Y. P., & Cheng, C. M. (2018). Two-dimensional electronic transport and surface electron accumulation in MoS2 Nature Communications, 9(1), [1442]. https://doi.org/10.1038/s41467-018-03824-6

Two-dimensional electronic transport and surface electron accumulation in MoS2 . / Siao, M. D.; Shen, W. C.; Chen, R. S.; Chang, Z. W.; Shih, M. C.; Chiu, Y. P.; Cheng, C. M.

In: Nature Communications, Vol. 9, No. 1, 1442, 01.12.2018.

Research output: Contribution to journalArticle

Siao, M. D. ; Shen, W. C. ; Chen, R. S. ; Chang, Z. W. ; Shih, M. C. ; Chiu, Y. P. ; Cheng, C. M. / Two-dimensional electronic transport and surface electron accumulation in MoS2 In: Nature Communications. 2018 ; Vol. 9, No. 1.
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