Abstract
The device core of a conventional quantum cascade laser (QCL) is composed of a superlattice of quantum wells (QWs) and barriers of fixed alloy compositions, which, for 4.5-5.0 μm-emitting QCLs operated at room temperature (RT), results in severe carrier leakage. In turn, the characteristic-temperature values for the threshold-current density J th and the slope efficiency are low: T0 is in the 130-150 K range 1-3 and T1 is in the 140-170 K range. 1,3 That is why the maximum wallplug efficiency η wp, max in CW operation at RT, for light emitted from the front facet of conventional devices with high-reflectivity-coated back facets, has typical values4 of only ≈13%, and no statistically relevant lifetest data have been reported to date for high-power CW devices. Furthermore, thermally accelerated lifetime studies3 have been limited to low CW powers (≤0.2 W); thus, no device-aging model can be deduced for high-CW-power (≥0.5 W) QCLs.
| Original language | English |
|---|---|
| Article number | 6348312 |
| Pages (from-to) | 30-31 |
| Number of pages | 2 |
| Journal | Conference Digest - IEEE International Semiconductor Laser Conference |
| DOIs | |
| Publication status | Published - 2012 |
| Externally published | Yes |
| Event | 23rd IEEE International Semiconductor Laser Conference, ISLC 2012 - San Diego, CA, United States Duration: 2012 Oct 7 → 2012 Oct 10 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering