Two-dimensional conduction-band engineering for performance optimization of quantum cascade lasers

D. Botez; J. D. Kirch; J. C. Shin; C. C. Chang; T. Garrod; L. J. Mawst; T. Earles

doi:10.1109/ISLC.2012.6348312

Two-dimensional conduction-band engineering for performance optimization of quantum cascade lasers

D. Botez^*, J. D. Kirch, J. C. Shin, C. C. Chang, T. Garrod, L. J. Mawst, T. Earles

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

The device core of a conventional quantum cascade laser (QCL) is composed of a superlattice of quantum wells (QWs) and barriers of fixed alloy compositions, which, for 4.5-5.0 μm-emitting QCLs operated at room temperature (RT), results in severe carrier leakage. In turn, the characteristic-temperature values for the threshold-current density J _th and the slope efficiency are low: T₀ is in the 130-150 K range ^1-3 and T₁ is in the 140-170 K range. ^1,3 That is why the maximum wallplug efficiency η _{wp, max} in CW operation at RT, for light emitted from the front facet of conventional devices with high-reflectivity-coated back facets, has typical values⁴ of only ≈13%, and no statistically relevant lifetest data have been reported to date for high-power CW devices. Furthermore, thermally accelerated lifetime studies³ have been limited to low CW powers (≤0.2 W); thus, no device-aging model can be deduced for high-CW-power (≥0.5 W) QCLs.

Original language	English
Article number	6348312
Pages (from-to)	30-31
Number of pages	2
Journal	Conference Digest - IEEE International Semiconductor Laser Conference
DOIs	https://doi.org/10.1109/ISLC.2012.6348312
Publication status	Published - 2012
Externally published	Yes
Event	23rd IEEE International Semiconductor Laser Conference, ISLC 2012 - San Diego, CA, United States Duration: 2012 Oct 7 → 2012 Oct 10

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/ISLC.2012.6348312

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title = "Two-dimensional conduction-band engineering for performance optimization of quantum cascade lasers",

abstract = "The device core of a conventional quantum cascade laser (QCL) is composed of a superlattice of quantum wells (QWs) and barriers of fixed alloy compositions, which, for 4.5-5.0 μm-emitting QCLs operated at room temperature (RT), results in severe carrier leakage. In turn, the characteristic-temperature values for the threshold-current density J th and the slope efficiency are low: T0 is in the 130-150 K range 1-3 and T1 is in the 140-170 K range. 1,3 That is why the maximum wallplug efficiency η wp, max in CW operation at RT, for light emitted from the front facet of conventional devices with high-reflectivity-coated back facets, has typical values4 of only ≈13%, and no statistically relevant lifetest data have been reported to date for high-power CW devices. Furthermore, thermally accelerated lifetime studies3 have been limited to low CW powers (≤0.2 W); thus, no device-aging model can be deduced for high-CW-power (≥0.5 W) QCLs.",

author = "D. Botez and Kirch, {J. D.} and Shin, {J. C.} and Chang, {C. C.} and T. Garrod and Mawst, {L. J.} and T. Earles",

year = "2012",

doi = "10.1109/ISLC.2012.6348312",

language = "English",

pages = "30--31",

journal = "Conference Digest - IEEE International Semiconductor Laser Conference",

issn = "0899-9406",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "23rd IEEE International Semiconductor Laser Conference, ISLC 2012 ; Conference date: 07-10-2012 Through 10-10-2012",

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T1 - Two-dimensional conduction-band engineering for performance optimization of quantum cascade lasers

AU - Botez, D.

AU - Kirch, J. D.

AU - Shin, J. C.

AU - Chang, C. C.

AU - Garrod, T.

AU - Mawst, L. J.

AU - Earles, T.

PY - 2012

Y1 - 2012

N2 - The device core of a conventional quantum cascade laser (QCL) is composed of a superlattice of quantum wells (QWs) and barriers of fixed alloy compositions, which, for 4.5-5.0 μm-emitting QCLs operated at room temperature (RT), results in severe carrier leakage. In turn, the characteristic-temperature values for the threshold-current density J th and the slope efficiency are low: T0 is in the 130-150 K range 1-3 and T1 is in the 140-170 K range. 1,3 That is why the maximum wallplug efficiency η wp, max in CW operation at RT, for light emitted from the front facet of conventional devices with high-reflectivity-coated back facets, has typical values4 of only ≈13%, and no statistically relevant lifetest data have been reported to date for high-power CW devices. Furthermore, thermally accelerated lifetime studies3 have been limited to low CW powers (≤0.2 W); thus, no device-aging model can be deduced for high-CW-power (≥0.5 W) QCLs.

AB - The device core of a conventional quantum cascade laser (QCL) is composed of a superlattice of quantum wells (QWs) and barriers of fixed alloy compositions, which, for 4.5-5.0 μm-emitting QCLs operated at room temperature (RT), results in severe carrier leakage. In turn, the characteristic-temperature values for the threshold-current density J th and the slope efficiency are low: T0 is in the 130-150 K range 1-3 and T1 is in the 140-170 K range. 1,3 That is why the maximum wallplug efficiency η wp, max in CW operation at RT, for light emitted from the front facet of conventional devices with high-reflectivity-coated back facets, has typical values4 of only ≈13%, and no statistically relevant lifetest data have been reported to date for high-power CW devices. Furthermore, thermally accelerated lifetime studies3 have been limited to low CW powers (≤0.2 W); thus, no device-aging model can be deduced for high-CW-power (≥0.5 W) QCLs.

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SN - 0899-9406

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EP - 31

JO - Conference Digest - IEEE International Semiconductor Laser Conference

JF - Conference Digest - IEEE International Semiconductor Laser Conference

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T2 - 23rd IEEE International Semiconductor Laser Conference, ISLC 2012

Y2 - 7 October 2012 through 10 October 2012

ER -

Two-dimensional conduction-band engineering for performance optimization of quantum cascade lasers

Abstract

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