Two-dimensional conduction-band engineering for performance optimization of quantum cascade lasers

D. Botez*, J. D. Kirch, J. C. Shin, C. C. Chang, T. Garrod, L. J. Mawst, T. Earles

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


The device core of a conventional quantum cascade laser (QCL) is composed of a superlattice of quantum wells (QWs) and barriers of fixed alloy compositions, which, for 4.5-5.0 μm-emitting QCLs operated at room temperature (RT), results in severe carrier leakage. In turn, the characteristic-temperature values for the threshold-current density J th and the slope efficiency are low: T0 is in the 130-150 K range 1-3 and T1 is in the 140-170 K range. 1,3 That is why the maximum wallplug efficiency η wp, max in CW operation at RT, for light emitted from the front facet of conventional devices with high-reflectivity-coated back facets, has typical values4 of only ≈13%, and no statistically relevant lifetest data have been reported to date for high-power CW devices. Furthermore, thermally accelerated lifetime studies3 have been limited to low CW powers (≤0.2 W); thus, no device-aging model can be deduced for high-CW-power (≥0.5 W) QCLs.

Original languageEnglish
Article number6348312
Pages (from-to)30-31
Number of pages2
JournalConference Digest - IEEE International Semiconductor Laser Conference
Publication statusPublished - 2012
Externally publishedYes
Event23rd IEEE International Semiconductor Laser Conference, ISLC 2012 - San Diego, CA, United States
Duration: 2012 Oct 72012 Oct 10

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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