INIS
vacancies
100%
defects
100%
semiconductor materials
100%
charge density
100%
doped materials
66%
polycrystals
66%
levels
33%
losses
33%
valence
33%
annealing
33%
high temperature
33%
x-ray diffraction
33%
peaks
33%
impurities
33%
electronic structure
33%
synchrotrons
33%
chemical analysis
33%
physical properties
33%
semimetals
33%
electron microprobe analysis
33%
Physics
Semiconductor
100%
Electrical Resistivity
66%
Polycrystalline
66%
Diffraction
33%
Gaps
33%
Insulators
33%
Temperature
33%
High Temperature
33%
Annealing
33%
Impurities
33%
Vacuum
33%
Electronic Structure
33%
Electrons
33%
Valence
33%
Narrowband
33%
Probe
33%
Seebeck Effect
33%
Material Science
Vacancy Defect
100%
Narrow Band Gap Semiconductor
50%
Electron Microprobe
50%
Chemistry
Crystal Vacancy
100%
Electron Probe Microanalysis
33%