Tunable photonic band gap in a doped semiconductor photonic crystal in near infrared region

C. J. Wu, Y. C. Hsieh, H. T. Hsu

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

In this work, we theoretically investigate the tunable photonic band gap (PBG) in a semiconductor-dielectric photonic crystal made of highly doped n-type silicon (Si) layers alternating with silicon oxide layers. The tunable characteristic is studied by changing the donor impurity concentration in Si layer. The PBG is numerically analyzed in the near infrared frequency region from the reflectance calculated by the transfer matrix method. The of filling factor in Si layer on the photonic band gap is also illustrated. These tunable properties in such a photonic crystal provide some information that could be of technical use to the semiconductor optoelectronics, especially in communication applications.

Original languageEnglish
Pages (from-to)271-283
Number of pages13
JournalProgress in Electromagnetics Research
Volume114
DOIs
Publication statusPublished - 2011 Jan 1

Fingerprint

Photonic band gap
Photonic crystals
photonics
Semiconductor materials
Infrared radiation
Silicon
crystals
Transfer matrix method
Silicon oxides
silicon
Optoelectronic devices
Impurities
silicon oxides
matrix methods
Communication
communication
reflectance
impurities

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Tunable photonic band gap in a doped semiconductor photonic crystal in near infrared region. / Wu, C. J.; Hsieh, Y. C.; Hsu, H. T.

In: Progress in Electromagnetics Research, Vol. 114, 01.01.2011, p. 271-283.

Research output: Contribution to journalArticle

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