Abstract
A tunable multichannel filter in the finite photonic crystal (PC) containing photonic quantum well (PQW) as a defect is proposed. The symmetric structure (AB) P(CD) Q(BA) P and the asymmetric structure (AB) P(CD) Q(AB) P are considered in this work. Here, the host PC of (AB) P is made of Si for layer A and of SiO 2 for layer B. In the PQW, (CD) Q, C also is Si, but D is an extrinsic semiconductor, n-type silicon (n-Si). With the use of n-Si, it is found that both structures can function as a tunable multichannel filter in the infrared region. The number of channels is equal to Q + 1 in the symmetric structure, whereas it is Q for the asymmetric one. The positions of multiple resonant peaks can be tuned by the variation in the impurity concentration of n-Si. The proposed filter could be used to design the wavelength division multiplexer filter that is of technical use in optical communications.
| Original language | English |
|---|---|
| Article number | 6145731 |
| Pages (from-to) | 283-290 |
| Number of pages | 8 |
| Journal | IEEE Photonics Journal |
| Volume | 4 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2012 Feb 29 |
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Keywords
- Photonic quantum well (PQW)
- extrinsic semiconductor
- multichannel filter
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
Cite this
Tunable multichannel filter in a photonic crystal containing semiconductor photonic quantum well. / Hung, Hui Chuan; Wu, Chien Jang; Yang, Tzong Jer; Chang, Shoou Jinn.
In: IEEE Photonics Journal, Vol. 4, No. 1, 6145731, 29.02.2012, p. 283-290.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Tunable multichannel filter in a photonic crystal containing semiconductor photonic quantum well
AU - Hung, Hui Chuan
AU - Wu, Chien Jang
AU - Yang, Tzong Jer
AU - Chang, Shoou Jinn
PY - 2012/2/29
Y1 - 2012/2/29
N2 - A tunable multichannel filter in the finite photonic crystal (PC) containing photonic quantum well (PQW) as a defect is proposed. The symmetric structure (AB) P(CD) Q(BA) P and the asymmetric structure (AB) P(CD) Q(AB) P are considered in this work. Here, the host PC of (AB) P is made of Si for layer A and of SiO 2 for layer B. In the PQW, (CD) Q, C also is Si, but D is an extrinsic semiconductor, n-type silicon (n-Si). With the use of n-Si, it is found that both structures can function as a tunable multichannel filter in the infrared region. The number of channels is equal to Q + 1 in the symmetric structure, whereas it is Q for the asymmetric one. The positions of multiple resonant peaks can be tuned by the variation in the impurity concentration of n-Si. The proposed filter could be used to design the wavelength division multiplexer filter that is of technical use in optical communications.
AB - A tunable multichannel filter in the finite photonic crystal (PC) containing photonic quantum well (PQW) as a defect is proposed. The symmetric structure (AB) P(CD) Q(BA) P and the asymmetric structure (AB) P(CD) Q(AB) P are considered in this work. Here, the host PC of (AB) P is made of Si for layer A and of SiO 2 for layer B. In the PQW, (CD) Q, C also is Si, but D is an extrinsic semiconductor, n-type silicon (n-Si). With the use of n-Si, it is found that both structures can function as a tunable multichannel filter in the infrared region. The number of channels is equal to Q + 1 in the symmetric structure, whereas it is Q for the asymmetric one. The positions of multiple resonant peaks can be tuned by the variation in the impurity concentration of n-Si. The proposed filter could be used to design the wavelength division multiplexer filter that is of technical use in optical communications.
KW - Photonic quantum well (PQW)
KW - extrinsic semiconductor
KW - multichannel filter
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U2 - 10.1109/JPHOT.2012.2186958
DO - 10.1109/JPHOT.2012.2186958
M3 - Article
AN - SCOPUS:84863176458
VL - 4
SP - 283
EP - 290
JO - IEEE Photonics Journal
JF - IEEE Photonics Journal
SN - 1943-0655
IS - 1
M1 - 6145731
ER -