### Abstract

A tunable multichannel filter in the finite photonic crystal (PC) containing photonic quantum well (PQW) as a defect is proposed. The symmetric structure (AB) ^{P}(CD) ^{Q}(BA) ^{P} and the asymmetric structure (AB) ^{P}(CD) ^{Q}(AB) ^{P} are considered in this work. Here, the host PC of (AB) ^{P} is made of Si for layer A and of SiO _{2} for layer B. In the PQW, (CD) ^{Q}, C also is Si, but D is an extrinsic semiconductor, n-type silicon (n-Si). With the use of n-Si, it is found that both structures can function as a tunable multichannel filter in the infrared region. The number of channels is equal to Q + 1 in the symmetric structure, whereas it is Q for the asymmetric one. The positions of multiple resonant peaks can be tuned by the variation in the impurity concentration of n-Si. The proposed filter could be used to design the wavelength division multiplexer filter that is of technical use in optical communications.

Original language | English |
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Article number | 6145731 |

Pages (from-to) | 283-290 |

Number of pages | 8 |

Journal | IEEE Photonics Journal |

Volume | 4 |

Issue number | 1 |

DOIs | |

Publication status | Published - 2012 Feb 29 |

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### Keywords

- Photonic quantum well (PQW)
- extrinsic semiconductor
- multichannel filter

### ASJC Scopus subject areas

- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering

### Cite this

*IEEE Photonics Journal*,

*4*(1), 283-290. [6145731]. https://doi.org/10.1109/JPHOT.2012.2186958