TY - JOUR
T1 - Tunable multichannel filter in a photonic crystal containing semiconductor photonic quantum well
AU - Hung, Hui Chuan
AU - Wu, Chien Jang
AU - Yang, Tzong Jer
AU - Chang, Shoou Jinn
N1 - Funding Information:
Manuscript received December 1, 2011; accepted January 30, 2012. Date of publication February 3, 2012; date of current version February 17, 2012. This work was supported by the National Science Council (NSC) of Taiwan under Contract NSC-100-2112-M-003-005-MY3 and from the National Taiwan Normal University under NTNU100-D-01, as well as the NSC and Bureau of Energy, Ministry of Economic Affairs of Taiwan, under Contract NSC-100-2221-E-006-040-MY2 and 100-D0204-6 and the LED Lighting Research Center of National Cheng Kung University. Corresponding author: C.-J. Wu (e-mail: jasperwu@ntnu.edu.tw).
PY - 2012
Y1 - 2012
N2 - A tunable multichannel filter in the finite photonic crystal (PC) containing photonic quantum well (PQW) as a defect is proposed. The symmetric structure (AB) P(CD) Q(BA) P and the asymmetric structure (AB) P(CD) Q(AB) P are considered in this work. Here, the host PC of (AB) P is made of Si for layer A and of SiO 2 for layer B. In the PQW, (CD) Q, C also is Si, but D is an extrinsic semiconductor, n-type silicon (n-Si). With the use of n-Si, it is found that both structures can function as a tunable multichannel filter in the infrared region. The number of channels is equal to Q + 1 in the symmetric structure, whereas it is Q for the asymmetric one. The positions of multiple resonant peaks can be tuned by the variation in the impurity concentration of n-Si. The proposed filter could be used to design the wavelength division multiplexer filter that is of technical use in optical communications.
AB - A tunable multichannel filter in the finite photonic crystal (PC) containing photonic quantum well (PQW) as a defect is proposed. The symmetric structure (AB) P(CD) Q(BA) P and the asymmetric structure (AB) P(CD) Q(AB) P are considered in this work. Here, the host PC of (AB) P is made of Si for layer A and of SiO 2 for layer B. In the PQW, (CD) Q, C also is Si, but D is an extrinsic semiconductor, n-type silicon (n-Si). With the use of n-Si, it is found that both structures can function as a tunable multichannel filter in the infrared region. The number of channels is equal to Q + 1 in the symmetric structure, whereas it is Q for the asymmetric one. The positions of multiple resonant peaks can be tuned by the variation in the impurity concentration of n-Si. The proposed filter could be used to design the wavelength division multiplexer filter that is of technical use in optical communications.
KW - Photonic quantum well (PQW)
KW - extrinsic semiconductor
KW - multichannel filter
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U2 - 10.1109/JPHOT.2012.2186958
DO - 10.1109/JPHOT.2012.2186958
M3 - Article
AN - SCOPUS:84863176458
VL - 4
SP - 283
EP - 290
JO - IEEE Photonics Journal
JF - IEEE Photonics Journal
SN - 1943-0655
IS - 1
M1 - 6145731
ER -