Tunable high transition temperature superconducting quantum interference device magnetometer with gate-voltage-controlled bicrystal junctions

Kuen Lin Chen, U. C. Sou, J. C. Chen, H. C. Yang, J. T. Jeng, P. C. Ko, H. E. Horng, C. H. Wu, J. H. Chen

Research output: Contribution to journalArticle

Abstract

A gate-voltage-controlled high transition temperature direct current superconducting quantum interference device (high- Tc dc SQUID) magnetometer was fabricated to study how the electric field effect affects the device's voltage-flux and voltage-current characteristics. The magnetometer consists of a monolithic YBa2 Cu3 O7-δ superconducting film and bicrystal junctions covered by a polymethylmethacrylate film as the gate insulator. It was found that the magnetic flux modulated voltage swing of the SQUID magnetometer varies by 48% when the gate voltage is changed from -1.9 to 9.5 V. The variation in voltage swing is attributed to the change of effective capacitance in grain-boundary junctions.

Original languageEnglish
Article number033504
JournalApplied Physics Letters
Volume95
Issue number3
DOIs
Publication statusPublished - 2009 Jul 31

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bicrystals
magnetometers
transition temperature
interference
electric potential
superconducting films
magnetic flux
grain boundaries
capacitance
direct current
insulators
electric fields

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Tunable high transition temperature superconducting quantum interference device magnetometer with gate-voltage-controlled bicrystal junctions. / Chen, Kuen Lin; Sou, U. C.; Chen, J. C.; Yang, H. C.; Jeng, J. T.; Ko, P. C.; Horng, H. E.; Wu, C. H.; Chen, J. H.

In: Applied Physics Letters, Vol. 95, No. 3, 033504, 31.07.2009.

Research output: Contribution to journalArticle

Chen, Kuen Lin ; Sou, U. C. ; Chen, J. C. ; Yang, H. C. ; Jeng, J. T. ; Ko, P. C. ; Horng, H. E. ; Wu, C. H. ; Chen, J. H. / Tunable high transition temperature superconducting quantum interference device magnetometer with gate-voltage-controlled bicrystal junctions. In: Applied Physics Letters. 2009 ; Vol. 95, No. 3.
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