Trend of subthreshold swing with DPN process for 28nm N/PMOSFETs

Mu Chun Wang; Chong Kuan Du; Min Ru Peng; Shea Jue Wang; Shuang Yuan Chen; Chuan Hsi Liu; Osbert Cheng; L. S. Huang; Shih Ching Lee

doi:10.1109/ISNE.2013.6512375

Trend of subthreshold swing with DPN process for 28nm N/PMOSFETs

Mu Chun Wang, Chong Kuan Du, Min Ru Peng, Shea Jue Wang^*, Shuang Yuan Chen, Chuan Hsi Liu, Osbert Cheng, L. S. Huang, Shih Ching Lee

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to conference › Paper › peer-review

5 Citations (Scopus)

Abstract

Although decoupled plasma nitridation (DPN) post high-k dielectric deposition shows the better threshold voltage shift than post deposition anneal (PDA), the non-adequate plasma nitrogen (N) concentration and anneal temperature still can dominate the device performance. Using these two variables to probe the impact of HK deposition integrity and the interface quality between channel and gate dielectric is an undetected and published topic. In the experiment, the lower N-concentration and higher anneal temperature is beneficial to the higher drive current and lower threshold for NMOSFET. However, the PMOSFET prefers the lower anneal temperature as well as lower N-concentration. Additionally, the phenomena for the combination of DPN process and strain engineering causing the non-uniform trend distribution of subthreshold swing with device channel lengths were exposed.

Original language	English
Pages	389-392
Number of pages	4
DOIs	https://doi.org/10.1109/ISNE.2013.6512375
Publication status	Published - 2013
Event	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan Duration: 2013 Feb 25 → 2013 Feb 26

Other

Other	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
Country/Territory	Taiwan
City	Kaohsiung
Period	2013/02/25 → 2013/02/26

Keywords

DPN
HK
PDA
gate-last
interface
subthreshold swing

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ISNE.2013.6512375

Cite this

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title = "Trend of subthreshold swing with DPN process for 28nm N/PMOSFETs",

abstract = "Although decoupled plasma nitridation (DPN) post high-k dielectric deposition shows the better threshold voltage shift than post deposition anneal (PDA), the non-adequate plasma nitrogen (N) concentration and anneal temperature still can dominate the device performance. Using these two variables to probe the impact of HK deposition integrity and the interface quality between channel and gate dielectric is an undetected and published topic. In the experiment, the lower N-concentration and higher anneal temperature is beneficial to the higher drive current and lower threshold for NMOSFET. However, the PMOSFET prefers the lower anneal temperature as well as lower N-concentration. Additionally, the phenomena for the combination of DPN process and strain engineering causing the non-uniform trend distribution of subthreshold swing with device channel lengths were exposed.",

keywords = "DPN, HK, PDA, gate-last, interface, subthreshold swing",

author = "Wang, {Mu Chun} and Du, {Chong Kuan} and Peng, {Min Ru} and Wang, {Shea Jue} and Chen, {Shuang Yuan} and Liu, {Chuan Hsi} and Osbert Cheng and Huang, {L. S.} and Lee, {Shih Ching}",

year = "2013",

doi = "10.1109/ISNE.2013.6512375",

language = "English",

pages = "389--392",

note = "2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 ; Conference date: 25-02-2013 Through 26-02-2013",

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T1 - Trend of subthreshold swing with DPN process for 28nm N/PMOSFETs

AU - Wang, Mu Chun

AU - Du, Chong Kuan

AU - Peng, Min Ru

AU - Wang, Shea Jue

AU - Chen, Shuang Yuan

AU - Liu, Chuan Hsi

AU - Cheng, Osbert

AU - Huang, L. S.

AU - Lee, Shih Ching

PY - 2013

Y1 - 2013

N2 - Although decoupled plasma nitridation (DPN) post high-k dielectric deposition shows the better threshold voltage shift than post deposition anneal (PDA), the non-adequate plasma nitrogen (N) concentration and anneal temperature still can dominate the device performance. Using these two variables to probe the impact of HK deposition integrity and the interface quality between channel and gate dielectric is an undetected and published topic. In the experiment, the lower N-concentration and higher anneal temperature is beneficial to the higher drive current and lower threshold for NMOSFET. However, the PMOSFET prefers the lower anneal temperature as well as lower N-concentration. Additionally, the phenomena for the combination of DPN process and strain engineering causing the non-uniform trend distribution of subthreshold swing with device channel lengths were exposed.

AB - Although decoupled plasma nitridation (DPN) post high-k dielectric deposition shows the better threshold voltage shift than post deposition anneal (PDA), the non-adequate plasma nitrogen (N) concentration and anneal temperature still can dominate the device performance. Using these two variables to probe the impact of HK deposition integrity and the interface quality between channel and gate dielectric is an undetected and published topic. In the experiment, the lower N-concentration and higher anneal temperature is beneficial to the higher drive current and lower threshold for NMOSFET. However, the PMOSFET prefers the lower anneal temperature as well as lower N-concentration. Additionally, the phenomena for the combination of DPN process and strain engineering causing the non-uniform trend distribution of subthreshold swing with device channel lengths were exposed.

KW - DPN

KW - HK

KW - PDA

KW - gate-last

KW - interface

KW - subthreshold swing

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T2 - 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013

Y2 - 25 February 2013 through 26 February 2013

ER -

Trend of subthreshold swing with DPN process for 28nm N/PMOSFETs

Abstract

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Keywords

ASJC Scopus subject areas

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