Trend of subthreshold swing with DPN process for 28nm N/PMOSFETs

Mu Chun Wang, Chong Kuan Du, Min Ru Peng, Shea Jue Wang, Shuang Yuan Chen, Chuan-Hsi Liu, Osbert Cheng, L. S. Huang, Shih Ching Lee

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

Although decoupled plasma nitridation (DPN) post high-k dielectric deposition shows the better threshold voltage shift than post deposition anneal (PDA), the non-adequate plasma nitrogen (N) concentration and anneal temperature still can dominate the device performance. Using these two variables to probe the impact of HK deposition integrity and the interface quality between channel and gate dielectric is an undetected and published topic. In the experiment, the lower N-concentration and higher anneal temperature is beneficial to the higher drive current and lower threshold for NMOSFET. However, the PMOSFET prefers the lower anneal temperature as well as lower N-concentration. Additionally, the phenomena for the combination of DPN process and strain engineering causing the non-uniform trend distribution of subthreshold swing with device channel lengths were exposed.

Original languageEnglish
Pages389-392
Number of pages4
DOIs
Publication statusPublished - 2013 May 27
Event2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan
Duration: 2013 Feb 252013 Feb 26

Other

Other2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
CountryTaiwan
CityKaohsiung
Period13/2/2513/2/26

Fingerprint

Nitridation
Plasmas
Nitrogen plasma
Gate dielectrics
Threshold voltage
Temperature
Experiments

Keywords

  • DPN
  • gate-last
  • HK
  • interface
  • PDA
  • subthreshold swing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Wang, M. C., Du, C. K., Peng, M. R., Wang, S. J., Chen, S. Y., Liu, C-H., ... Lee, S. C. (2013). Trend of subthreshold swing with DPN process for 28nm N/PMOSFETs. 389-392. Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan. https://doi.org/10.1109/ISNE.2013.6512375

Trend of subthreshold swing with DPN process for 28nm N/PMOSFETs. / Wang, Mu Chun; Du, Chong Kuan; Peng, Min Ru; Wang, Shea Jue; Chen, Shuang Yuan; Liu, Chuan-Hsi; Cheng, Osbert; Huang, L. S.; Lee, Shih Ching.

2013. 389-392 Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan.

Research output: Contribution to conferencePaper

Wang, MC, Du, CK, Peng, MR, Wang, SJ, Chen, SY, Liu, C-H, Cheng, O, Huang, LS & Lee, SC 2013, 'Trend of subthreshold swing with DPN process for 28nm N/PMOSFETs' Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan, 13/2/25 - 13/2/26, pp. 389-392. https://doi.org/10.1109/ISNE.2013.6512375
Wang MC, Du CK, Peng MR, Wang SJ, Chen SY, Liu C-H et al. Trend of subthreshold swing with DPN process for 28nm N/PMOSFETs. 2013. Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan. https://doi.org/10.1109/ISNE.2013.6512375
Wang, Mu Chun ; Du, Chong Kuan ; Peng, Min Ru ; Wang, Shea Jue ; Chen, Shuang Yuan ; Liu, Chuan-Hsi ; Cheng, Osbert ; Huang, L. S. ; Lee, Shih Ching. / Trend of subthreshold swing with DPN process for 28nm N/PMOSFETs. Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan.4 p.
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