@inproceedings{960e44ada32844b48b7c4f389c325651,
title = "Transport properties of ultra thin oxide gated Si SET near room temperature",
abstract = "We have fabricated ultrathin oxide (thickness) of ∼ 6 nm gated silicon transistors with a point-contact junction of ∼ 20 nm thick, and 20 nm wide to explore single electron charging effects near room temperature. Current-voltage (I-V) measurements show clear periodic oscillations and a dramatic collapse of peak's maximum at various temperatures. Analysis of energy spacing relates the charging energy to a dot of ∼8 nm in size and also suggesting tunneling is via the first excited state. These low-power ∼ 30 pW and low cost devices can be very useful for the next generation nanoelectronics.",
keywords = "Coulomb blockade, Current-voltage characteristics, Point-contact, Quantum dot, Single-electron transistor",
author = "Wan, {Yue Min} and Huang, {Kuo Dong} and Sung, {Ching Lung} and Hu, {Shu Fen}",
year = "2005",
doi = "10.1109/NANO.2005.1500639",
language = "English",
isbn = "0780391993",
series = "2005 5th IEEE Conference on Nanotechnology",
publisher = "IEEE Computer Society",
pages = "750--753",
booktitle = "2005 5th IEEE Conference on Nanotechnology",
note = "2005 5th IEEE Conference on Nanotechnology ; Conference date: 11-07-2005 Through 15-07-2005",
}