Transport properties of CrO2 (110) films grown on TiO 2 buffered Si substrates by chemical vapor deposition

S. J. Liu; J. Y. Juang; K. H. Wu; T. M. Uen; Y. S. Gou; J. Y. Lin

doi:10.1063/1.1481534

Transport properties of CrO₂ (110) films grown on TiO ₂ buffered Si substrates by chemical vapor deposition

S. J. Liu, J. Y. Juang, K. H. Wu, T. M. Uen, Y. S. Gou, J. Y. Lin

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Epitaxial CrO₂ (110)-oriented films were fabricated on Si (100) substrates buffered by rutile TiO₂ derived from oxidation of a pulsed-laser-deposited TiN layer. The epitaxial films of CrO₂ were prepared by chemical vapor deposition in a two-zone furnace with oxygen flow from a CrO₃ precursor. The transport measurements show that the CrO₂ films are metallic with a Curie temperature of about 380 K. The temperature dependence of resistivity was best described by a phenomenological expression ρ(T)=ρ₀+AT²e^(-Δ/T) over the range of 5-350 K with Δ=94K. The magnetic measurements show the in-plane coercive fields are about 30 and 60 Oe at 300 and 5 K, respectively. The temperature dependent spontaneous magnetization follows Bloch's T ^3/2 law and the slope suggests a critical wavelength of λ_Δ∼30.6Å beyond which spin-flip scattering becomes important.

Original language	English
Pages (from-to)	4202-4204
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	22
DOIs	https://doi.org/10.1063/1.1481534
Publication status	Published - 2002 Jun 3
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Transport properties of CrO2 (110) films grown on TiO 2 buffered Si substrates by chemical vapor deposition",

abstract = "Epitaxial CrO2 (110)-oriented films were fabricated on Si (100) substrates buffered by rutile TiO2 derived from oxidation of a pulsed-laser-deposited TiN layer. The epitaxial films of CrO2 were prepared by chemical vapor deposition in a two-zone furnace with oxygen flow from a CrO3 precursor. The transport measurements show that the CrO2 films are metallic with a Curie temperature of about 380 K. The temperature dependence of resistivity was best described by a phenomenological expression ρ(T)=ρ0+AT2e(-Δ/T) over the range of 5-350 K with Δ=94K. The magnetic measurements show the in-plane coercive fields are about 30 and 60 Oe at 300 and 5 K, respectively. The temperature dependent spontaneous magnetization follows Bloch's T 3/2 law and the slope suggests a critical wavelength of λΔ∼30.6{\AA} beyond which spin-flip scattering becomes important.",

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AU - Liu, S. J.

AU - Juang, J. Y.

AU - Wu, K. H.

AU - Uen, T. M.

AU - Gou, Y. S.

AU - Lin, J. Y.

PY - 2002/6/3

Y1 - 2002/6/3

N2 - Epitaxial CrO2 (110)-oriented films were fabricated on Si (100) substrates buffered by rutile TiO2 derived from oxidation of a pulsed-laser-deposited TiN layer. The epitaxial films of CrO2 were prepared by chemical vapor deposition in a two-zone furnace with oxygen flow from a CrO3 precursor. The transport measurements show that the CrO2 films are metallic with a Curie temperature of about 380 K. The temperature dependence of resistivity was best described by a phenomenological expression ρ(T)=ρ0+AT2e(-Δ/T) over the range of 5-350 K with Δ=94K. The magnetic measurements show the in-plane coercive fields are about 30 and 60 Oe at 300 and 5 K, respectively. The temperature dependent spontaneous magnetization follows Bloch's T 3/2 law and the slope suggests a critical wavelength of λΔ∼30.6Å beyond which spin-flip scattering becomes important.

AB - Epitaxial CrO2 (110)-oriented films were fabricated on Si (100) substrates buffered by rutile TiO2 derived from oxidation of a pulsed-laser-deposited TiN layer. The epitaxial films of CrO2 were prepared by chemical vapor deposition in a two-zone furnace with oxygen flow from a CrO3 precursor. The transport measurements show that the CrO2 films are metallic with a Curie temperature of about 380 K. The temperature dependence of resistivity was best described by a phenomenological expression ρ(T)=ρ0+AT2e(-Δ/T) over the range of 5-350 K with Δ=94K. The magnetic measurements show the in-plane coercive fields are about 30 and 60 Oe at 300 and 5 K, respectively. The temperature dependent spontaneous magnetization follows Bloch's T 3/2 law and the slope suggests a critical wavelength of λΔ∼30.6Å beyond which spin-flip scattering becomes important.

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Transport properties of CrO₂ (110) films grown on TiO ₂ buffered Si substrates by chemical vapor deposition

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