Transport properties of CrO2 (110) films grown on TiO 2 buffered Si substrates by chemical vapor deposition

Shiu-Jen Liu, J. Y. Juang, K. H. Wu, T. M. Uen, Y. S. Gou, J. Y. Lin

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16 Citations (Scopus)


Epitaxial CrO2 (110)-oriented films were fabricated on Si (100) substrates buffered by rutile TiO2 derived from oxidation of a pulsed-laser-deposited TiN layer. The epitaxial films of CrO2 were prepared by chemical vapor deposition in a two-zone furnace with oxygen flow from a CrO3 precursor. The transport measurements show that the CrO2 films are metallic with a Curie temperature of about 380 K. The temperature dependence of resistivity was best described by a phenomenological expression ρ(T)=ρ0+AT2e(-Δ/T) over the range of 5-350 K with Δ=94K. The magnetic measurements show the in-plane coercive fields are about 30 and 60 Oe at 300 and 5 K, respectively. The temperature dependent spontaneous magnetization follows Bloch's T 3/2 law and the slope suggests a critical wavelength of λΔ∼30.6Å beyond which spin-flip scattering becomes important.

Original languageEnglish
Pages (from-to)4202-4204
Number of pages3
JournalApplied Physics Letters
Issue number22
Publication statusPublished - 2002 Jun 3

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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