Transient time-resolved Raman scattering in semiconductors: Band-structure effects

C. Chia, Otto F. Sankey, K. T. Tsen

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Simulations of the transient time-resolved single-particle Raman-scattering cross section for nonequilibrium electrons is presented. Because of the nonequilibrium distribution and the short pulses, the fluctuation-dissipation theorem and the Fermi golden rule are no longer valid. We use an equation-of-motion method under the random-phase approximation to determine the Raman-scattering cross section. Particular attention is paid to the band-structure k-dependent resonant enhancement factor. The effect of the k-dependent resonant enhancement factor has been demonstrated to play an important role in determining the line shape of single-particle scattering spectra from spin-density-fluctuation contributions.

Original languageEnglish
Pages (from-to)6509-6516
Number of pages8
JournalPhysical Review B
Volume45
Issue number12
DOIs
Publication statusPublished - 1992 Jan 1

ASJC Scopus subject areas

  • Condensed Matter Physics

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