Transient time-resolved Raman scattering in semiconductors: Band-structure effects

C. Chia, Otto F. Sankey, K. T. Tsen

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Simulations of the transient time-resolved single-particle Raman-scattering cross section for nonequilibrium electrons is presented. Because of the nonequilibrium distribution and the short pulses, the fluctuation-dissipation theorem and the Fermi golden rule are no longer valid. We use an equation-of-motion method under the random-phase approximation to determine the Raman-scattering cross section. Particular attention is paid to the band-structure k-dependent resonant enhancement factor. The effect of the k-dependent resonant enhancement factor has been demonstrated to play an important role in determining the line shape of single-particle scattering spectra from spin-density-fluctuation contributions.

Original languageEnglish
Pages (from-to)6509-6516
Number of pages8
JournalPhysical Review B
Volume45
Issue number12
DOIs
Publication statusPublished - 1992 Jan 1

Fingerprint

scattering cross sections
Band structure
Raman scattering
Raman spectra
Semiconductor materials
augmentation
Equations of motion
line shape
equations of motion
dissipation
theorems
Scattering
Electrons
pulses
approximation
scattering
electrons
simulation

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Transient time-resolved Raman scattering in semiconductors : Band-structure effects. / Chia, C.; Sankey, Otto F.; Tsen, K. T.

In: Physical Review B, Vol. 45, No. 12, 01.01.1992, p. 6509-6516.

Research output: Contribution to journalArticle

Chia, C. ; Sankey, Otto F. ; Tsen, K. T. / Transient time-resolved Raman scattering in semiconductors : Band-structure effects. In: Physical Review B. 1992 ; Vol. 45, No. 12. pp. 6509-6516.
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