TiO2 -based indium phosphide metal-oxide-semiconductor capacitor with high capacitance density

Chun Hu Cheng*, Hsiao Hsuan Hsu, Kun I. Chou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


We report a low-temperature InP p-MOS with a high capacitance density of 2.7 μF/ cm2 , low leakage current of 0.77 A/cm2 at 1 V and tight current distribution. The high-density and low-leakage InP MOS was achieved by using high- κ TiLaO dielectric and ultra-thin SiO2 buffer layer with a thickness of less than 0.5 nm. The obtained EOT can be aggressively scaled down to < 1 nm through the use of stacked TiLaO/SiO2 dielectric, which has the potential for the future application of high mobility III-V CMOS devices.

Original languageEnglish
Pages (from-to)2810-2813
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Issue number4
Publication statusPublished - 2015 Jan 1


  • Equivalent oxide thickness (EOT)
  • Indium phosphide (InP)
  • TiLaO

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics


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