Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

C. H. Liu*, Y. L. Chen, C. P. Cheng, H. W. Chen, H. W. Hsu, S. Y. Chen, H. S. Huang, M. C. Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Engineering & Materials Science