Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

H. W. Hsu, H. S. Huang, H. W. Chen, C. P. Cheng, K. C. Lin, S. Y. Chen, M. C. Wang*, C. H. Liu

*Corresponding author for this work

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