Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

H. W. Hsu, H. S. Huang, H. W. Chen, Chin-Pao Cheng, K. C. Lin, S. Y. Chen, M. C. Wang*, Chuan-Hsi Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics'. Together they form a unique fingerprint.

Engineering & Materials Science

Physics & Astronomy

Chemical Compounds